Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
400 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N72 |
3.6 V |
25.4 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0012 Amp |
60 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
900 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
60 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
|||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
990 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
736 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
365 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
19.05 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.003 Amp |
70 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
524288 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
844 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
18874368 bit |
.024 Amp |
80 ns |
|||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
918 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
50 ns |
|||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1224 mA |
33554432 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX36 |
32M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
1207959552 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.024 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2097152 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
18 |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
16777216 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX32 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
536870912 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
4MX40 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
167772160 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
8MX40 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
335544320 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
656 mA |
8388608 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
268435456 bit |
.016 Amp |
60 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
365 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.003 Amp |
70 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
262144 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
900 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
.009 Amp |
60 ns |
||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
300 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
150994944 bit |
.003 Amp |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1040 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.012 Amp |
80 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
8MX40 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
335544320 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
990 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
304 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
19.05 mm |
Not Qualified |
67108864 bit |
.004 Amp |
50 ns |
||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
|||||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1464 mA |
33554432 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX36 |
32M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
1207959552 bit |
.024 Amp |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1264 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
34.925 mm |
Not Qualified |
301989888 bit |
.024 Amp |
60 ns |
||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
816 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
60 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
4194304 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
4MX32 |
4M |
SINGLE |
1 |
R-XSMA-N72 |
Not Qualified |
134217728 bit |
70 ns |
|||||||||||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
|||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
576 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
828 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
33 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
4MX33 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
138412032 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
160 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
DUAL |
1 |
R-XDMA-N72 |
3.6 V |
25.4 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH |
.002 Amp |
70 ns |
|||||||||||||||||||
Samsung |
DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
YES |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
1.27 mm |
70 Cel |
8MX32 |
8M |
0 Cel |
ZIG-ZAG |
1 |
R-XZMA-N72 |
3.6 V |
31.88 mm |
2.54 mm |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX |
59.68 mm |
50 ns |
||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8388608 words |
5 |
39 |
MICROELECTRONIC ASSEMBLY |
19 |
70 Cel |
3-STATE |
8MX39 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
327155712 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
50 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
18 |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
80 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
1MX36 |
1M |
SINGLE |
1 |
R-XSMA-N72 |
Not Qualified |
37748736 bit |
60 ns |
|||||||||||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
DIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
182 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
DIMM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
DUAL |
1 |
R-XDMA-N72 |
3.6 V |
25.4 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0008 Amp |
60 ns |
||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
220 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
33 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
4MX33 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
138412032 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1320 mA |
16777216 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX36 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
603979776 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
50 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.