84 DRAM 2,005

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB18T256161AF-22	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYB18T256160AC-3	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.45 ns
HYB18T512160BF-25F	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
HYB18T512160BF-3.7	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.5 ns
HYB18T256160AF-25F	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
HYR164830G-840	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	805306368 bit	2.37 V
HYR184820G-845	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	905969664 bit	2.37 V
HYB18T256161AF-28	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.55 ns
HYR183200G-845	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX18	32M			DUAL	1	R-XDMA-N184	2.63 V		800 MHz		Not Qualified	603979776 bit	2.37 V								45 ns
HYB18T256160AC-5	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V			10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.5 mm	.6 ns
HYB18T256160AFL-5	Infineon Technologies	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V		200 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.6 ns
HYB18T256161AF-33	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1		245			12.5 mm	.6 ns
HYB18T256160AF-5	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.004 Amp	4,8	12.5 mm	.6 ns
HYB18T512160BF-2.5F	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
HYB18TC256160AF-3S	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYR163200G-653	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V		600 MHz		Not Qualified	536870912 bit	2.37 V								53 ns
HYB18T512160AF-3	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.45 ns
HYB18TC512160AF-3.7	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.5 ns
HYB18T256160AFL-3	Infineon Technologies	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V		333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.45 ns
HYB18T512160AC-3S	Infineon Technologies	DDR2 DRAM	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, FINE PITCH			.8 mm	95 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V			10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYR166430G-711	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		16	MICROELECTRONIC ASSEMBLY						64MX16	64M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	1073741824 bit	2.37 V
HYB18T512160BF-3	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYB18T256160AFL-3.7	Infineon Technologies	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	266 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.5 ns
HYR163200G-840	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V		800 MHz		Not Qualified	536870912 bit	2.37 V								40 ns
HYB18T256161AFL25	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYB18T256161AFL28	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.55 ns
HYB18T256160AF-3	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.45 ns
HYB18TC512160AF-5	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.6 ns
HYR164830G-653	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	805306368 bit	2.37 V
HYR186420G-711	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	1207959552 bit	2.37 V
HYB18T256160AF-3S	Infineon Technologies	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	4,8	12.5 mm	.45 ns
HYR184820G-840	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		18	MICROELECTRONIC ASSEMBLY						48MX18	48M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	905969664 bit	2.37 V
HYB18T512161BF-28	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.55 ns
HYB18T256160AF-3.7	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	266 MHz	10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.004 Amp	4,8	12.5 mm	.5 ns
HYB18TC256160AF-3.7	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.5 ns
HYR163200G-845	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V		800 MHz		Not Qualified	536870912 bit	2.37 V								45 ns
HYB18T512160BF-5	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.6 ns
HYR164830G-845	Infineon Technologies	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words				2.5		16	MICROELECTRONIC ASSEMBLY						48MX16	48M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	805306368 bit	2.37 V
HYB18T256161AFL33	Infineon Technologies	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84	2.1 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH						12.5 mm	.6 ns
HYB18T512160AF-3S	Infineon Technologies	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M			BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
HYR183200G-745	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX18	32M			DUAL	1	R-XDMA-N184	2.63 V		711 MHz		Not Qualified	603979776 bit	2.37 V								45 ns
HYR163200G-745	Infineon Technologies	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	32MX16	32M			DUAL	1	R-XDMA-N184	2.63 V		711 MHz		Not Qualified	536870912 bit	2.37 V								45 ns
THMR1E4-6	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	603979776 bit	2.37 V
THMR1E16-7	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	2415919104 bit	2.37 V
THMR1E8-7	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words				2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	1207959552 bit	2.37 V
THMR1E4-8	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	603979776 bit	2.37 V
THMR1E16-8	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				2.5		18	MICROELECTRONIC ASSEMBLY						128MX18	128M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	2415919104 bit	2.37 V
THMR1E4-7	Toshiba	RAMBUS DRAM MODULE		84			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words				2.5		18	MICROELECTRONIC ASSEMBLY						32MX18	32M			DUAL	1	R-XDMA-N184	2.63 V				Not Qualified	603979776 bit	2.37 V

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.