84 DRAM 2,005

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4T51163QG-HCE7T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		275 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B84	3			400 MHz		Not Qualified	536870912 bit			e1		260	.008 Amp	4,8		.4 ns
K4T1G164QD-ZLE7	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B84	1			400 MHz		Not Qualified	1073741824 bit			e3			.008 Amp	4,8		.4 ns
K4T51163QC-ZCCC0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	200 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.008 Amp	4,8	13 mm	.6 ns
K4T51163QG-HLCCT	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84				200 MHz		Not Qualified	536870912 bit						.0045 Amp	4,8		.6 ns
K4T51163QC-ZLF7	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			400 MHz		Not Qualified	536870912 bit			e3				4,8		.4 ns
K4T1G164QE-HCF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit						.01 Amp	4,8		.4 ns
KMMR16R86C1-RK8	Samsung	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	8MX16	8M			DUAL	1	R-XDMA-N184		2.63 V		800 MHz		Not Qualified	134217728 bit	2.37 V
K4N51163QE-GC2A0	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84				350 MHz		Not Qualified	536870912 bit						.008 Amp	4,8		.45 ns
KMMR18R84C1-RM8	Samsung	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	8MX18	8M			DUAL	1	R-XDMA-N184		2.63 V		800 MHz		Not Qualified	150994944 bit	2.37 V								40 ns
K4R571669E-GCT9	Samsung	RAMBUS DRAM		84	FBGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words			COMMON		1.8/2.5,2.5	16	GRID ARRAY, FINE PITCH	BGA84,10X16,32	DRAMs	.8 mm		3-STATE	16MX16	16M			BOTTOM		R-PBGA-B84	3			1066 MHz		Not Qualified	268435456 bit					260				32 ns
K4T1G164QG-BIE7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit						.01 Amp	4,8		.4 ns
K4N51163QC-ZC360	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	275 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.01 Amp	4,8	13 mm	.5 ns
K4N56163QF-GC300	Samsung	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm	.45 ns
K4T1G164QD-ZCCC	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M		MATTE TIN	BOTTOM		R-PBGA-B84	1			200 MHz		Not Qualified	1073741824 bit			e3			.015 Amp	4,8		.6 ns
K4T51163QI-HCLF7	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
K4T28163QO-HCE7T	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	8388608 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	134217728 bit					260	.008 Amp	4,8		.4 ns
K4T1G164QE-HLF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit						.005 Amp	4,8		.4 ns
K4T51163QE-ZLD50	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	266 MHz	9 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.0045 Amp	4,8	13 mm	.5 ns
K4T1G164QF-BCE6T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		165 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				333 MHz		Not Qualified	1073741824 bit						.01 Amp	4,8		.45 ns
K4T28163QO-HCF8	Samsung	DDR2 DRAM	OTHER	84	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		205 mA	8388608 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	0 Cel		BOTTOM		R-PBGA-B84				533 MHz		Not Qualified	134217728 bit					260	.008 Amp	4,8		.35 ns
KMMR18R4GC-K8-L	Samsung	RAMBUS DRAM MODULE		84			RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		18	MICROELECTRONIC ASSEMBLY						64MX18	64M			DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	1207959552 bit	2.37 V	SELF REFRESH
K4T51163QB-GCE6	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	32MX16	32M		Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B84				333 MHz		Not Qualified	536870912 bit			e0				4,8		.45 ns
K4T51163QC-ZLE6	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		301 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			333 MHz		Not Qualified	536870912 bit			e3			.005 Amp	4,8		.45 ns
K4T51163QI-HLE60	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		185 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			333 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.45 ns
KMMR18R86C1-RG6	Samsung	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	18	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	8MX18	8M			DUAL	1	R-XDMA-N184		2.63 V		600 MHz		Not Qualified	150994944 bit	2.37 V
K4N56163QF-ZC2A0	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	350 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	13 mm	.45 ns
K4T1G164QG-BPF7T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		150 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	1073741824 bit						.005 Amp	4,8		.4 ns
K4T51163QE-ZIF7	Samsung	CACHE DRAM MODULE	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			400 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.4 ns
K4T1G164QG-BCE60	Samsung	DDR2 DRAM		84	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	140 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1 mm	333 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1			.01 Amp	4,8	12.5 mm	.45 ns
K4N56163QF-GC330	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	370 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	13 mm	.47 ns
K4T1G164QE-HIF70	Samsung	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
K4T1G164QQ-HCE6T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84				333 MHz		Not Qualified	1073741824 bit						.015 Amp	4,8		.45 ns
K4T51163QC-ZLD5	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			266 MHz		Not Qualified	536870912 bit			e3			.0045 Amp	4,8		.5 ns
K4N51163QC-GC33T	Samsung	GDDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM		R-PBGA-B84				300 MHz		Not Qualified	536870912 bit					240	.01 Amp	4,8		.47 ns
K4N56163QG-GC200	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	4,8	YES	COMMON	2	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B84		2.1 V	1.2 mm	500 MHz	11 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0				4,8	13 mm	.35 ns
K4T1G164QD-ZCE70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				.015 Amp	4,8	13 mm	.4 ns
K4T51163QC-ZCE60	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	333 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.008 Amp	4,8	13 mm	.45 ns
KMMR16R8CC1-RG6	Samsung	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	8MX16	8M			DUAL	1	R-XDMA-N184		2.63 V		600 MHz		Not Qualified	134217728 bit	2.37 V
K4N1G164QE-HC250	Samsung	STATIC COLUMN DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	7.5 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.01 Amp	4,8	12.5 mm	.4 ns
K4T51163QI-HCLF8	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		7.5 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.35 ns
K4T51163QN-BCF80	Samsung	DDR2 DRAM	OTHER	84	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1 mm		7.5 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.35 ns
K4T1G164QD-ZCD5T	Samsung	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B84	3			267 MHz		Not Qualified	1073741824 bit					260	.015 Amp	4,8		.5 ns
K4T51163QC-ZLF70	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	2	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	13 mm	.4 ns
K4T51163QB-ZCCC0	Samsung	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	.6 ns
KMMR16R8CC1-RM8	Samsung	RAMBUS DRAM MODULE		84	DIMM		RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words			COMMON	2.5	1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40	DRAMs	1 mm		3-STATE	8MX16	8M			DUAL	1	R-XDMA-N184		2.63 V		800 MHz		Not Qualified	134217728 bit	2.37 V
K4N56163QF-GC36	Samsung	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	16MX16	16M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	275 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		4,8	13 mm	.5 ns
K4T51163QQ-BCE70	Samsung	DDR2 DRAM		84	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1 mm		7.5 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
K4T51163QI-HLF7T	Samsung	DDR2 DRAM	OTHER	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B84	1			400 MHz		Not Qualified	536870912 bit			e3			.008 Amp	4,8		.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.