DFP DRAM 116

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
5962-9454903QYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535 Class Q	FLAT	ASYNCHRONOUS	210 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	75 ns
SMJ4C1024-80HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.015 mm	80 ns
SMJ44C256-10HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	100 ns
SMJ626162-15HKD	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	175 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-CDFP-F50	3.465 V	3.55 mm	66 MHz	16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	21 mm	9 ns
5962-9454901MYC	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	195 mA	262144 words				5	5	16	FLATPACK	TPAK64,1.6SQ,20	Other Memory ICs	.5 mm	125 Cel		256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4			.012 Amp		18.985 mm	80 ns
5962-9231201MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp		19.685 mm	100 ns
SMJ416100-70HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.655 mm	70 ns
5962-9674303QXX	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK			.8 mm	125 Cel		1MX16	1M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					21 mm	80 ns
5962-9231201MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0					19.685 mm	100 ns
5962-9084702MXX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		4	FLATPACK			1.27 mm	125 Cel		1MX4	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.54 mm		12.446 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.78 mm	100 ns
MT4C1024F-10883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		70 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20					Not Qualified	1048576 bit			e0			.001 Amp			100 ns
MT4C1024F-15883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		50 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20					Not Qualified	1048576 bit			e0			.001 Amp			150 ns
5962-01-317-6623	Micron Technology	PAGE MODE DRAM	OTHER	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	FLAT		40 mA	65536 words			SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDFP-F16					Not Qualified	65536 bit									120 ns
MT4C4001JF-8/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		90 mA	1048576 words		NO	COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDFP-F20					Not Qualified	4194304 bit						.002 Amp			80 ns
MT4264F-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	FLAT		40 mA	65536 words			SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F16					Not Qualified	65536 bit			e0						120 ns
MT4264F-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	FLAT		40 mA	65536 words			SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F16					Not Qualified	65536 bit			e0						100 ns
MT4C4001JF-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		80 mA	1048576 words		NO	COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDFP-F20					Not Qualified	4194304 bit						.002 Amp			100 ns
MT4264F-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DFP	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	FLAT		40 mA	65536 words			SEPARATE	5	5	1	FLATPACK	FL16,.3	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F16					Not Qualified	65536 bit			e0						150 ns
MT4C1024F-12883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		60 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.3	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F20					Not Qualified	1048576 bit			e0			.001 Amp			120 ns
MT4C4001JF-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	DFP	1024	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	FLAT		70 mA	1048576 words		NO	COMMON	5	5	4	FLATPACK	FL20,.4	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		DUAL		R-XDFP-F20					Not Qualified	4194304 bit						.002 Amp			120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.