MT4C1024F-10883C by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT4C1024F-10883C
Description	FAST PAGE DRAM; Temperature Grade: MILITARY; No. of Terminals: 20; Package Code: DFP; Refresh Cycles: 512; Package Shape: RECTANGULAR;
Datasheet	MT4C1024F-10883C Datasheet
In Stock	260

NAME	DESCRIPTION
Package Body Material:	CERAMIC
Maximum Standby Current:	.001 Amp
Organization:	1MX1
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	70 mA
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	20
No. of Words:	1048576 words
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
Screening Level:	38535Q/M;38534H;883B
Technology:	CMOS
JESD-30 Code:	R-XDFP-F20
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	125 Cel
Package Code:	DFP
Input/Output Type:	SEPARATE
Memory Density:	1048576 bit
Memory IC Type:	FAST PAGE DRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Memory Width:	1
Qualification:	Not Qualified
Package Equivalence Code:	FL20,.3
Refresh Cycles:	512
Maximum Access Time:	100 ns
No. of Words Code:	1M
Nominal Supply Voltage / Vsup (V):	5
Terminal Pitch:	1.27 mm
Temperature Grade:	MILITARY
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
260	-	-

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;