DIE DRAM 191

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Interleaved Burst Length	Maximum Access Time
MT4LC4M4E8D24ADC1	Micron Technology	EDO DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				3.3	4	UNCASED CHIP			3-STATE	4MX4	4M		UPPER	1	R-XUUC-N57			Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C8512D18AWC2-8	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	524288 words				5	8	UNCASED CHIP		70 Cel	3-STATE	512KX8	512K	0 Cel	UPPER	1	X-XUUC-N65	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C4001JD22AWC2	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	X-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD30AWC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C1004JD22ADX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
5962-9688901Q9X	Micron Technology	FAST PAGE DRAM	COMMERCIAL	26	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-PRF-38535 Class Q	NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP		70 Cel		4MX1	4M	0 Cel	UPPER	1	X-XUUC-N26	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT4C1004JD30AWC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT4C4001JD22AWX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	X-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C1004JD22ADC2-7	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C16257D32ADC3-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	262144 words				5	16	UNCASED CHIP		70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	R-XUUC-N51	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C16257D32AWC1-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	262144 words				5	16	UNCASED CHIP		70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C4001JD30ADC7-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C4001JD22ADX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C1004JD22ADC2-8	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C4001JD30AWC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT4C8512D18ADC2-7	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	524288 words				5	8	UNCASED CHIP		70 Cel	3-STATE	512KX8	512K	0 Cel	UPPER	1	X-XUUC-N65	5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C4001JD30ADC7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC2-6	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT4C4001JD30AWC1	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD30ADC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4LC2M8B1D24ADC1	Micron Technology	FAST PAGE DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	2097152 words		YES		3.3	8	UNCASED CHIP			3-STATE	2MX8	2M		UPPER	1	R-XUUC-N57			Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; STANDARD PROBE (0 TO 85 DEGREE C)
MT4C1004JD22ADX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C4001JD22ADC2	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4001JD22ADX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4LC4M4B1D24ADC2-7	Micron Technology	FAST PAGE DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words		YES		3.3	4	UNCASED CHIP			3-STATE	4MX4	4M		UPPER	1	R-XUUC-N57			Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; SPEED PROBE (0 TO 85 DEGREE C)		70 ns
MT4C4001JD22ADC1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD22AWX1-6	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT4C4M4B1D21ADC2-7	Micron Technology	FAST PAGE DRAM	OTHER	45	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	4	UNCASED CHIP		85 Cel	3-STATE	4MX4	4M	0 Cel	UPPER	1	R-XUUC-N45	5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT4C4001JD22AWC2-8	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	1048576 words				5	4	UNCASED CHIP			3-STATE	1MX4	1M		UPPER	1	X-XUUC-N30			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C1004JD30ADC3-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C1004JD30ADC7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	4194304 words				5	1	UNCASED CHIP			3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31			Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT46H64M16LFT68M-N1001	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	67108864 words	2,4,8,16	YES	COMMON	1.8	16	UNCASED CHIP		85 Cel	3-STATE	64MX16	64M	-40 Cel	UPPER	1	R-XUUC-N	1.95 V	200 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H128M16LFT69MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	134217728 words	2,4,8,16	YES		1.8	16	UNCASED CHIP	DIE OR CHIP	85 Cel		128MX16	128M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	166 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H128M16LFT69M-N1001	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	134217728 words	2,4,8,16	YES		1.8	16	UNCASED CHIP	DIE OR CHIP	85 Cel		128MX16	128M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	185 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H16M32LFT67M-N1002	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		16MX32	16M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	200 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H32M32LFT68M-N1002	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP		85 Cel	3-STATE	32MX32	32M	-40 Cel	UPPER	1	R-XUUC-N	1.95 V	200 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H64M32LFT69M-N1004	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	67108864 words	2,4,8,16	YES		1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		64MX32	64M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	200 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H64M32LFT69M-N1002	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	67108864 words	2,4,8,16	YES		1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		64MX32	64M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	185 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H32M16LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8	16	UNCASED CHIP	DIE OR CHIP	85 Cel		32MX16	32M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	166 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46HC16M32LGT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		16MX32	16M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	166 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H32M16LFT67M-N1001	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8	16	UNCASED CHIP	DIE OR CHIP	85 Cel		32MX16	3M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	200 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46HC16M32LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		16MX32	16M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	166 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H64M16LFT68MWC2	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	67108864 words	2,4,8,16	YES	COMMON	1.8	16	UNCASED CHIP		85 Cel	3-STATE	64MX16	64M	-40 Cel	UPPER	1	R-XUUC-N	1.95 V	166 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H64M32LFT69MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	67108864 words	2,4,8,16	YES		1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		64MX32	64M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	166 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H16M32LFT67MWC2	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	112	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	16777216 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP	DIE OR CHIP	85 Cel		16MX32	16M	-40 Cel	DUAL	1	R-XUUC-N112	1.95 V	166 MHz		536870912 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H32M32LFT68MWC2	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	33554432 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP		85 Cel	3-STATE	32MX32	32M	-40 Cel	UPPER	1	R-XUUC-N	1.95 V	166 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16
MT46H128M16LFT69M-N1003	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	141	DIE		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS	134217728 words	2,4,8,16	YES		1.8	16	UNCASED CHIP	DIE OR CHIP	85 Cel		128MX16	128M	-40 Cel	DUAL	1	R-XUUC-N141	1.95 V	200 MHz		2147483648 bit	1.7 V	AUTO/SELF REFRESH	2,4,8,16

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.