DIE DRAM 191

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
M65KA256AL10W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	60 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	16MX16	16M	-30 Cel	UPPER	1	X-XUUC-N		1.95 V	105 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	7 ns
M65KA128AL10W5	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	4096	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	52 mA	2097152 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	64	UNCASED CHIP	WAFER	DRAMs	90 Cel	3-STATE	2MX64	2M	-25 Cel	UPPER	1	X-XUUC-N	1	1.95 V	104 MHz	Not Qualified	134217728 bit	1.65 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	7 ns
M65KG256AB8W8	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	16MX16	16M	-30 Cel	UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M65KG512AA8W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	140 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	105 Cel	3-STATE	32MX16	32M	-30 Cel	UPPER	1	R-XUUC-N		1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M65KC512AB8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	95 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	16MX32	16M	-30 Cel	UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KA512AB8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	85 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	32MX16	32M	-30 Cel	UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KG512AB8W8	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	90 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	32MX16	32M	-30 Cel	UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	6 ns
M65KA512AB8W	STMicroelectronics	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED		DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP			85 Cel		32MX16	32M	-30 Cel	UPPER	1	R-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M65KA128AE8W5	STMicroelectronics	SYNCHRONOUS DRAM			DIE	4096	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	80 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		3-STATE	8MX16	8M		UPPER	1	X-XUUC-N	1	1.95 V	133 MHz	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KA256AF8W8	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	80 mA	16777216 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	16MX16	16M	-30 Cel	UPPER	1	X-XUUC-N	1	1.95 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KG512AB8W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP			105 Cel		32MX16	32M	-30 Cel	UPPER	1	X-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M65KA512AB83T	STMicroelectronics	SYNCHRONOUS DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	85 mA	33554432 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	16	UNCASED CHIP	DIE OR CHIP	DRAMs	85 Cel	3-STATE	32MX16	32M	-25 Cel	UPPER	1	X-XUUC-N	1	1.9 V	133 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	1,2,4,8	6 ns
M65KG512AB6W9	STMicroelectronics	DDR1 DRAM	OTHER		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	180 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	105 Cel	3-STATE	32MX16	32M	-30 Cel	UPPER	1	X-XUUC-N	1	1.9 V	166 MHz	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		.00001 Amp	2,4,8,16	5 ns
M65KG512AB85T	STMicroelectronics	DDR1 DRAM	OTHER		DIE		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP			85 Cel		32MX16	32M	-25 Cel	UPPER	1	X-XUUC-N		1.9 V		Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH				6 ns
M65KG256AF8W8T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	90 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs	85 Cel	3-STATE	16MX16	16M	-30 Cel	UPPER	1	X-XUUC-N		1.9 V	133 MHz	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		.0006 Amp	2,4,8,16	6 ns
K4M28323PH-W3000	Samsung	SYNCHRONOUS DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		1.8		32	UNCASED CHIP					4MX32	4M		UPPER	1	R-XUUC-N	3	1.95 V		Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	260
K4M28323PH-W3000RY	Samsung	SYNCHRONOUS DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		1.8		32	UNCASED CHIP					4MX32	4M		UPPER	1	R-XUUC-N		1.95 V		Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH
MT4C16257D32AWC2-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
MT4C4001JD22ADX1-6	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
MT4C16257D32AWC1	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD22AWX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4C4M4B1D21ADC1	Micron Technology	FAST PAGE DRAM	OTHER	45	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		4	UNCASED CHIP			85 Cel	3-STATE	4MX4	4M	0 Cel	UPPER	1	R-XUUC-N45		5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4LC4001JD22ADC2	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4LC4001JD22ADC1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4LC1M16E5D24AWC2-7	Micron Technology	EDO DRAM		57	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		16	UNCASED CHIP				3-STATE	1MX16	1M		UPPER	1	X-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C4001JD22ADC2-7	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C16257D32ADC7-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	R-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C8512D18ADC1-8	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		8	UNCASED CHIP			70 Cel	3-STATE	512KX8	512K	0 Cel	UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4C1004JD22ADX1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	R-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD30ADC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD30AWC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4C4001JD30ADC2-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4C4M4B1D24ADC2-7	Micron Technology	FAST PAGE DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		YES		5		4	UNCASED CHIP				3-STATE	4MX4	4M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; SPEED PROBE (0 TO 85 DEGREE C)				70 ns
MT4C1004JD30AWC2	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C4M4B1D21AWC2-7	Micron Technology	FAST PAGE DRAM	OTHER	45	DIE	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		4	UNCASED CHIP			85 Cel	3-STATE	4MX4	4M	0 Cel	UPPER	1	X-XUUC-N45		5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C4001JD30ADC2-7	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C4001JD30ADC3	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C16257D32ADC2-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	R-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4LC1M16C3D24AWC1	Micron Technology	FAST PAGE DRAM		57	DIE	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		YES		3.3		16	UNCASED CHIP				3-STATE	1MX16	1M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; STANDARD PROBE (0 TO 85 DEGREE C)
MT4C16257D18ADC2-6	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns
MT4C16257D32ADC3-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP			70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	R-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4LC1M16C3D24ADC2-7	Micron Technology	EDO DRAM		57	DIE	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		16	UNCASED CHIP				3-STATE	1MX16	1M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C4M4B1D24ADC1	Micron Technology	FAST PAGE DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words		YES		5		4	UNCASED CHIP				3-STATE	4MX4	4M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; STANDARD PROBE (0 TO 85 DEGREE C)
MT4LC1M16E5D24ADC2-7	Micron Technology	EDO DRAM		57	DIE	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		16	UNCASED CHIP				3-STATE	1MX16	1M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C1004JD22AWX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP				3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				70 ns
MT4C4001JD30ADC3-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP				3-STATE	1MX4	1M		UPPER	1	R-XUUC-N31				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4LC1M16C3D24ADC2-8	Micron Technology	EDO DRAM		57	DIE	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		16	UNCASED CHIP				3-STATE	1MX16	1M		UPPER	1	R-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				80 ns
MT4C4M4B1D21ADC2-6	Micron Technology	FAST PAGE DRAM	OTHER	45	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		4	UNCASED CHIP			85 Cel	3-STATE	4MX4	4M	0 Cel	UPPER	1	R-XUUC-N45		5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.