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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | M65KA128AL10W5 |
| Description | SYNCHRONOUS DRAM; Temperature Grade: OTHER; Package Code: DIE; Refresh Cycles: 4096; Package Shape: UNSPECIFIED; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | M65KA128AL10W5 Datasheet |
| In Stock | 2,035 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Standby Current: | .00001 Amp |
| Organization: | 2MX64 |
| Output Characteristics: | 3-STATE |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.65 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 52 mA |
| Maximum Clock Frequency (fCLK): | 104 MHz |
| No. of Words: | 2097152 words |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| Technology: | CMOS |
| JESD-30 Code: | X-XUUC-N |
| Package Shape: | UNSPECIFIED |
| Terminal Form: | NO LEAD |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 90 Cel |
| Package Code: | DIE |
| Moisture Sensitivity Level (MSL): | 1 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 134217728 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 1,2,4,8,FP |
| Memory IC Type: | SYNCHRONOUS DRAM |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 64 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | WAFER |
| Refresh Cycles: | 4096 |
| Interleaved Burst Length: | 1,2,4,8 |
| Maximum Access Time: | 7 ns |
| No. of Words Code: | 2M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | AUTO/SELF REFRESH |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 1.95 V |
| Power Supplies (V): | 1.8 |
