Samsung - K4M28323PH-W3000

K4M28323PH-W3000 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4M28323PH-W3000
Description SYNCHRONOUS DRAM; Package Code: DIE; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; Access Mode: FOUR BANK PAGE BURST; Terminal Form: NO LEAD;
Datasheet K4M28323PH-W3000 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 4MX32
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
No. of Words: 4194304 words
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
Technology: CMOS
JESD-30 Code: R-XUUC-N
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Package Code: DIE
Moisture Sensitivity Level (MSL): 3
No. of Ports: 1
Memory Density: 134217728 bit
Self Refresh: YES
Memory IC Type: SYNCHRONOUS DRAM
Memory Width: 32
No. of Functions: 1
Qualification: Not Qualified
No. of Words Code: 4M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 260
Maximum Supply Voltage (Vsup): 1.95 V
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