DIP DRAM 1,315

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
UPD41416-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		55 mA	16384 words		COMMON			4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	65536 bit			e0			120 ns
UPD416C-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			16384 words		SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	16384 bit			e0			200 ns
UPD421001C-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			120 ns
UPD4164C-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	65536 bit			e0			150 ns
HM51256P-8	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	16	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE				70 Cel		256KX1	256K	0 Cel		DUAL	1	R-PDIP-T16		5.5 V				262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				85 ns
KM44C1000BLP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp	24.56 mm	70 ns
KM44C1010CP-5	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	50 ns
KM41C1000BP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	70 ns
KM44C1004CSLP-8	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	24.56 mm	80 ns
KM44C268BP-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns
KM44C266CP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns
KM41C1000CP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	70 ns
KM44V1000BLLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	YES	COMMON	3.3	3.3	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		3.6 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00005 Amp	24.56 mm	80 ns
KM44C256CLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	24.56 mm	80 ns
KM44C1000CP-L7	Samsung	FAST PAGE DRAM		20	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE			2.54 mm			1MX4	1M			DUAL	1	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V				26.4 mm	70 ns
KM41C4000AP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	80 ns
KM41C4000ASLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	22.02 mm	80 ns
KM44V1004CP-L7	Samsung	EDO DRAM		20	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			3.3		4	IN-LINE			2.54 mm			1MX4	1M			DUAL	1	R-PDIP-T20		3.6 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	3 V				26.4 mm	70 ns
KM44V1000BLLP-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	1048576 words	YES	COMMON	3.3	3.3	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		3.6 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00005 Amp	24.56 mm	100 ns
KM41V4000CP-L6	Samsung	FAST PAGE DRAM		20	DIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			3.3		1	IN-LINE			2.54 mm			4MX1	4M			DUAL	1	R-PDIP-T20		3.6 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	3 V				26.4 mm	60 ns
KM44C1002BP-7	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.56 mm	70 ns
KM41C464P-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.96 mm	80 ns
KM4164A12Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			120 ns
KM41C257P-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	45 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		5.5 V	4.65 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		19.43 mm	100 ns
KM41C1000DP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.95 mm	70 ns
KM41C1000BP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	22.02 mm	80 ns
KM41256-12P	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16	3				Not Qualified	262144 bit			e0			120 ns
KM41C256P-6	Samsung	FAST PAGE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16					Not Qualified	262144 bit			e0			60 ns
KM41V4000BLP-10	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		3.6 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.00005 Amp	22.02 mm	100 ns
KM41C4002CP-5	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			22.02 mm	50 ns
KM41C4002CP-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			22.02 mm	60 ns
KM4164A20Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			200 ns
KM424C64P-12	Samsung	VIDEO DRAM	COMMERCIAL	24	DIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	65536 words			5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T24		5.5 V	5.33 mm	10.16 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.003 Amp		120 ns
KM41C4000ALP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	22.02 mm	80 ns
KM44V1004CP-8	Samsung	EDO DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	1048576 words	NO	COMMON	3.3	3.3	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		3.6 V	5.08 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.4 mm	80 ns
KM44C1010BP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.56 mm	70 ns
KM41C4000ALP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	105 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	22.02 mm	70 ns
KM44C1000ASLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	24.56 mm	80 ns
KM44C256DP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.4 mm	80 ns
KM44C256BLP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	24.56 mm	80 ns
KM41C1001AP-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	TIN LEAD	DUAL		R-PDIP-T18	3				Not Qualified	1048576 bit			e0	.001 Amp		80 ns
KM44C1002AP-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns
KM4164A15Z	Samsung	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16					Not Qualified	65536 bit			e0			150 ns
KM41V4000BLLP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	4194304 words	YES	SEPARATE	3.3	3.3	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		3.6 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00005 Amp	22.02 mm	70 ns
KM44C1000ALP-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	105 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	24.56 mm	70 ns
KM41C4001BP-6	Samsung	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	22.02 mm	60 ns
KM41257AP-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		85 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	TIN LEAD	DUAL		R-PDIP-T16	3				Not Qualified	262144 bit			e0			100 ns
KM44C1010BP-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.65 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	24.56 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.