LFBGA DRAM 961

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S64323LH-HF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4M56323LE-MC800	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S64323LF-DS1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm	100 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	7 ns
K4M513233E-MF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4M513233E-EL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4M563233D-ME1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	7 ns
K4M563233D-EE1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
K4S643233H-FL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4S643233H-HC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S643233H-FG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	7 ns
K4M56323LD-MN80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	6 ns
K4S513233F-EF1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4D263238E-GC2A	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	935 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	350 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.095 Amp	2,4,8	12 mm	.55 ns
K4N26323AE-GC220	Samsung	DDR2 DRAM		144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			4MX32	4M			BOTTOM	1	S-PBGA-B144		2.6 V	1.4 mm		13 mm	Not Qualified	134217728 bit	2.4 V	AUTO/SELF REFRESH						13 mm
K4J55323QF-GC160	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	8388608 words	4	YES	COMMON	2	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm	600 MHz	12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e0			.135 Amp	4	12 mm	.29 ns
K4M563233D-ME80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	320 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	6 ns
K4D623238B-GC45	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	800 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	222 MHz	12 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.065 Amp	2,4,8	12 mm	.7 ns
K4D263238I-GC500	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0					12 mm	.7 ns
K4D553238E-JC40	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	250 MHz	12 mm	Not Qualified	268435456 bit	2.375 V	AUTO/SELF REFRESH	e0				2,4,8	12 mm	.6 ns
K4M56323LE-MS80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	6 ns
K4D26323QG-GC220	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.1 V	1.4 mm		12 mm	Not Qualified	134217728 bit	1.9 V	AUTO/SELF REFRESH	e0					12 mm	.45 ns
K4M513233E-EF1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm	7 ns
K4S51323LC-MS1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	100 MHz	9.5 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	15.5 mm	7 ns
K4S643233H-HG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4S513233C-MP80	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	125 MHz	9.5 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	15.5 mm	6 ns
K4S643233F-SI75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	133 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	5.4 ns
K4S643233F-DP1L	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm	105 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	13 mm	7 ns
K4S64323LF-SP15	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	80 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	66 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	9 ns
K4S513233C-MN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	100 MHz	9.5 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e0			.0015 Amp	1,2,4,8	15.5 mm	7 ns
K4J55323QF-GL200	Samsung	GDDR3 DRAM	OTHER	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	950 mA	8388608 words	4	YES	COMMON	1.8	2	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm	500 MHz	12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e0			.13 Amp	4	12 mm	.35 ns
K4S51323LF-EC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
K4S643233H-HC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4M56323LE-EL1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	260			13 mm	7 ns
K4D55323QF-GC330	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	0 Cel		BOTTOM	1	S-PBGA-B144		1.9 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						12 mm	.55 ns
K4S64323LH-FG600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
K4M563233D-EN1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH			260	.0012 Amp	1,2,4,8	13 mm	7 ns
K4D26323QG-VC250	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	475 mA	4194304 words	2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	1.9 V	1.4 mm	400 MHz	12 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	2,4,8	12 mm	.45 ns
K4D263238E-GC2A0	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144		2.94 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.55 ns
K4S64323LH-FF600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH		30	240			13 mm	5.4 ns
K4S643233H-HC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2097152 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		2MX32	2M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4M56323LE-MR800	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4D263238I-VC50	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	344 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e1		260	.011 Amp	2,4,8	12 mm	.7 ns
K4M56323LE-ML800	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S64323LF-SU1H	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	2097152 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	100 MHz	11 mm	Not Qualified	67108864 bit	2.3 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	7 ns
K4S643233F-SE75	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	2MX32	2M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	133 MHz	11 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH	e0			.0005 Amp	1,2,4,8	13 mm	5.4 ns
K4D553235F-VC200	Samsung	GDDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B144	3	2.1 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.9 V	AUTO/SELF REFRESH	e1					12 mm	.35 ns
K4M56323LE-MR80	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel		8MX32	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.4 mm	125 MHz	11 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.0012 Amp	1,2,4,8	13 mm	6 ns
K4S513233F-EC750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.4 mm		11 mm	Not Qualified	536870912 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.