LFBGA DRAM 961

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4S283233F-EE1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH			260	.002 Amp	1,2,4,8	13 mm	6 ns
K4S28323LE-DN750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S28323LE-SE1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283234F-MN15	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm	66 MHz	11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	13 mm	9 ns
K4S28323LE-DN1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S28323LE-DC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233E-DE750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e1					13 mm	6 ns
K4S28323LE-DS1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S28323LE-DL600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233E-DC1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233F-ME750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	5.5 ns
K4S283233F-MP1L	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	13 mm	6 ns
K4S28323LE-SC750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S283233E-SC750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S283233F-MN1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH		30	240			13 mm	6 ns
K4S28323LE-DR1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S28323LE-DL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233E-SG750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S283233E-SL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233E-DG1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S28323LE-SS1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233E-SF600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233F-EP75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	133 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH			260	.002 Amp	1,2,4,8	13 mm	5.5 ns
K4S283233E-SN600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S28323LE-SS750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S28323LE-SL1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233F-MP75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	133 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	13 mm	5.5 ns
K4S28323LE-SS600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233F-MP1H	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm	105 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	13 mm	6 ns
K4S283233E-DG600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S283233F-EI75	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-40 Cel		BOTTOM	1	R-PBGA-B90	3	3.6 V	1.45 mm	133 MHz	11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH			260	.002 Amp	1,2,4,8	13 mm	5.5 ns
K4S28323LE-SC1L0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283233E-DC750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S28323LE-DR1H0	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	7 ns
K4S283234F-ME1L	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm	100 MHz	11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	13 mm	7 ns
K4S283233E-DF600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S28323LE-DE750	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	6 ns
K4S283233E-DC600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S28323LE-DN600	Samsung	SYNCHRONOUS DRAM	OTHER	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1.45 mm		11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT48H16M32L2B5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	8.5 ns
MT47H16M16BP-5E:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
MT47H64M4BG-37E	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.5 ns
MT41J256M8THR-25:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT48LC16M32L2F5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0					13 mm
MT47H16M16BG-37E	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm	266 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.005 Amp	4,8	14 mm	.5 ns
MT47H32M8BG-37E	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.5 ns
MT47H512M4THN-25:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT41J512M8THU-15:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.