LFBGA DRAM 961

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41J1G4THU-25E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	335 mA	1073741824 words		YES	COMMON	1.5	1.5	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	400 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		15 mm
MT41J1G4THU-187:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	360 mA	1073741824 words		YES	COMMON	1.5	1.5	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		15 mm
MT48LC16M32S2F5-7	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm		536870912 bit	3 V	AUTO/SELF REFRESH	e0					13 mm
MT48LC16M32L2F5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0					13 mm
MT48V16M32L2F5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.7		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.5 V	1.4 mm		8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					13 mm
MT47H256M8THN-25E:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	347 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT48V32M16S2FG-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	33554432 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		2.7 V	1.6 mm	125 MHz	8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.00002 Amp	1,2,4,8	14 mm	7 ns
MT47H512M8THM-37E:A	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	308 mA	536870912 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e1	30	260	.016 Amp		14 mm
MT48H16M32L2F5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm	8.5 ns
MT48LC16M32L2B5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1					13 mm
MT47H32M8BG-3E:B	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm	333 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.005 Amp	4,8	14 mm	.45 ns
MT48V16M32L2B5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.7		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.5 V	1.4 mm		8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					13 mm
MT48LC32M16S2FG-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		3.6 V	1.6 mm	125 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0			.00002 Amp	1,2,4,8	14 mm	7 ns
MT48LC16M32L2B5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm		8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1					13 mm
MT47H64M4BG-5E:B	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.6 ns
MT41J256M8THR-15:D	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	505 mA	134217728 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		11.5 mm
MT41K4G4SMA-187E:E	Micron Technology	DDR3L DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		YES		1.35		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4GX4	4G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.45 mm		9.5 mm		17179869184 bit	1.283 V	SELF REFRESH						11.5 mm
MT48LC16M16T2FG-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54		3.6 V	1.6 mm	125 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0				1,2,4,8	14 mm	7 ns
MT48LC16M32S2B5-6IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	375 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		3.6 V	1.4 mm	166 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1			.0024 Amp	1,2,4,8	13 mm
MT47H32M8BP-37EES:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
MT41J512M8THU-25	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	2.5 ns
MT48V16M32L2B5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.7		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.5 V	1.4 mm		8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					13 mm
MT47H16M16BG-5E	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm	200 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.005 Amp	4,8	14 mm	.6 ns
MT41J512M8THU-15E	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	1.5 ns
MT47H16M16BP-5E	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
MT41J512M4THR-25E:D	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	245 mA	268435456 words		YES	COMMON	1.5	1.5	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm	400 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		11.5 mm
MT47H64M4BG-37V:B	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.5 ns
MT41J2G8SMA-15E:E	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.45 mm		9.5 mm		17179869184 bit	1.425 V	SELF REFRESH						11.5 mm
MT41J256M8THR-187:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J256M8THR-15:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J1G4THU-15E:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm
MT47H32M8BP-37VIT:B	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	190 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm	266 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.006 Amp	4,8	12 mm	.5 ns
MT47H16M16BP-3E:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.45 ns
MT41J1G4THU-15E	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	1.5 ns
MT41J512M8THU-187:A	Micron Technology	DDR3 DRAM	OTHER	82	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	445 mA	536870912 words		YES	COMMON	1.5	1.5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA82,11X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm	533 MHz	12.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.035 Amp		15 mm
MT41J2G8SMA-125:E	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.45 mm		9.5 mm		17179869184 bit	1.425 V	SELF REFRESH						11.5 mm
MT41J256M8THR-15E:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT47H256M8THN-3:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	292 mA	134217728 words		YES	COMMON	1.8	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.35 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H16M16BP-37V:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
MT41J256M8THR-25E:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41J1G4THU-187E	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	1.87 ns
MT41J512M4THR-15:D	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	268435456 words		YES	COMMON	1.5	1.5	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm	667 MHz	9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp		11.5 mm
MT41J512M4THR-187:F	Micron Technology	DDR3 DRAM	OTHER	78	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.35 mm		9 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					11.5 mm
MT47H512M4THN-3:E	Micron Technology	DDR2 DRAM	OTHER	63	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	292 mA	268435456 words		YES	COMMON	1.8	1.8	4	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63	1	1.9 V	1.35 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.014 Amp		11.5 mm
MT47H64M4BP-3ES:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
MT47H64M4BP-5EES:B	Micron Technology	DDR2 DRAM	OTHER	60	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.3 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	.6 ns
MT41J512M8THU-187	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.5		8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			32MX8	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	1.87 ns
MT41J1G4THU-25E	Micron Technology	DDR3 DRAM		82	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		4	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			64MX4	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B82		1.575 V	1.35 mm		12.5 mm	Not Qualified	268435456 bit	1.425 V	AUTO/SELF REFRESH	e1					15 mm	2.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.