QCCN DRAM 92

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MB81256-10	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER				70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						100 ns
MB81256-12	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		1	CHIP CARRIER				70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						120 ns
MB8264A-15	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	128	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER				70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH						150 ns
SMJ4464-12FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	120 ns
SMJ4464-20FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	200 ns
5962-01-231-3789	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-9084701MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	QCCN	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	120 ns
SMJ4164-15FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
SMJ4464-15FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	150 ns
5962-9231202MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		4	CHIP CARRIER			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0				19.69 mm	80 ns
5962-9061703MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					100 ns
SMJ4416-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
5962-9231203MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp	19.69 mm	70 ns
SMJ4164-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
5962-01-266-1459	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ4164-12FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	120 ns
SMJ4256-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	200 ns
5962-9231201MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	60 mA	4194304 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp	19.69 mm	100 ns
5962-01-263-9395	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
5962-8949703MZA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-N28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					120 ns
5962-9231201MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		4	CHIP CARRIER			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0				19.69 mm	100 ns
5962-9084702MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	QCCN	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	100 ns
SMJ4164-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
SMJ4464-12FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	120 ns
SMJ4164-20FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					12.32 mm	200 ns
SMJ4164-20FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	200 ns
5962-9231202MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	70 mA	4194304 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC24/28,.45	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0			.001 Amp	19.69 mm	80 ns
SMJ4164-15FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					12.32 mm	150 ns
SMJ4464-15FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	150 ns
SMJ4464-20FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	200 ns
SMJ4164-15FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	150 ns
SMJ4416-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
5962-8949703MZX	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	110 mA	262144 words			5	5	4	CHIP CARRIER	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		QUAD	2	R-XQCC-N28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp		120 ns
SMJ4164-15FGM	Texas Instruments	PAGE MODE DRAM	MILITARY	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			150 ns
SMJ4416-15FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
5962-8949704MZA	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	2	R-XQCC-N28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	e0					100 ns
SMJ4164-20FGM	Texas Instruments	PAGE MODE DRAM	MILITARY	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		R-XQCC-N18				Not Qualified	65536 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
5962-9084703MTA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	QCCN	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	90 mA	1048576 words	NO	COMMON	5	5	4	CHIP CARRIER	SOLCC20/26,.35	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		QUAD	1	R-CQCC-N20	5.5 V	2.03 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	17.145 mm	80 ns
SMJ4256-15FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	150 ns
5962-8949704MZX	Texas Instruments	VIDEO DRAM	MILITARY	28	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS	120 mA	262144 words			5	5	4	CHIP CARRIER	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		QUAD	2	R-XQCC-N28	5.5 V			Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH				.015 Amp		100 ns
SMJ4416-15FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	150 ns
SMJ4416-20FGS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	100 Cel	3-STATE	16KX4	16K	-55 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
SMJ4256-12FVS	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel		QUAD	1	R-CQCC-N18	5.25 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.32 mm	120 ns
5962-9061702MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					120 ns
5962-9231203MYA	Texas Instruments	FAST PAGE DRAM	MILITARY	24	QCCN		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		4	CHIP CARRIER			1.27 mm	125 Cel		4MX4	4M	-55 Cel	TIN LEAD	QUAD	1	R-XQCC-N24	5.5 V	3.18 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	e0				19.69 mm	70 ns
SMJ4164-12FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					12.32 mm	120 ns
SMJ4416-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns
5962-9061704MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	18	QCCN		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		262144 words			5		4	CHIP CARRIER				125 Cel		256KX4	256K	-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.