QCCN DRAM 92

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length	Maximum Access Time
MT1259EC-20XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0		200 ns
MT1259EC-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		100 ns
MT4C1004EC-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words	NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20				Not Qualified	4194304 bit			e0		100 ns
5962-8767602XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	150 ns
5962-8767601XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	120 ns
5962-8767603XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	200 ns
MT1259EC-20/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		200 ns
MT1259EC-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		150 ns
MT4C1004EC-15/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words	NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20				Not Qualified	4194304 bit			e0		150 ns
5962-8767604XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	100 ns
MT1259EC-10/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		100 ns
MT1259EC-15/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		150 ns
MT1259EC-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		120 ns
5962-8767604XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	100 ns
MT1259EC-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		80 ns
MT4C1004EC-12/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words	NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ	DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20				Not Qualified	4194304 bit			e0		120 ns
MT1259EC-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		120 ns
MT4264EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0		150 ns
5962-8767603XA	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	200 ns
5962-8767601XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	120 ns
5962-8767602XX	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN		RECTANGULAR	UNSPECIFIED	PAGE	YES	1	NMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER			1.27 mm	110 Cel		64KX4	64K	-55 Cel		QUAD	1	R-XQCC-N18	5.5 V	2.34 mm	7.43 mm	Not Qualified	262144 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		12.26 mm	150 ns
MT1259EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		150 ns
MT4264EC-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0		100 ns
MT1259EC-12/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0		120 ns
MT1259EC-12XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0		120 ns
MT1259EC-10XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0		100 ns
MT4264EC-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	MIL-STD-883 Class B (Modified)	NO LEAD		40 mA	65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	65536 bit			e0		120 ns
MT1259EC-15XT	Micron Technology	PAGE MODE DRAM	MILITARY		QCCN	256		CERAMIC		YES		MOS		NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC(UNSPEC)	DRAMs		125 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD						Not Qualified	262144 bit			e0		150 ns
5962-01-368-3808	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS		NO LEAD			65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel		QUAD		R-XQCC-N18				Not Qualified	262144 bit					120 ns
MT4067EC-10XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		100 ns
MT4067EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		150 ns
MT4067EC-12/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		120 ns
MT4067EC-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		120 ns
MT4067EC-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		100 ns
MT4067EC-10/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		100 ns
MT4067EC-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		120 ns
MT4067EC-15XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		150 ns
MT4067EC-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		80 ns
MT4067EC-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		200 ns
MT4067EC-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		100 ns
MT4067EC-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		150 ns
MT4067EC-20/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		200 ns
MT4067EC-15/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		150 ns
MT4067EC-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18	5.5 V			Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.