QFP DRAM 167

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KM4132G512AQ-F10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				100 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		6 ns
K4G163222A-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	4.5 ns
KM4132G512AQ-5/F5	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3.135 V					20 mm	4.5 ns
K4G163222A-PC55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	5 ns
K4G323222M-PL60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G512AQ-F8	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	6 ns
KM4132G512AQ-8	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	6 ns
KM4132G512Q-F7	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				143 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		6 ns
K4G323222A-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4.5 ns
K4G813222B-UC10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	7 ns
KM4132G271AQ-8	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V					20 mm	80 ns
KM4132G512AQ-8/F8	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V					20 mm	6 ns
KM4132G512Q-6/F6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	5.5 ns
KM4132G112Q-F8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0	.002 Amp	4,8	20 mm	6 ns
K4G323222M-PL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G112Q-C/FC	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH				20 mm	5 ns
KM4132G512TQ-F6	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		310 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				166 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		5.5 ns
K4D62323HA-QC60T	Samsung	DDR1 DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		410 mA	2097152 words	2,4,8,FP		COMMON		2.5,3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				166 MHz		Not Qualified	67108864 bit			e0	.06 Amp	2,4,8		.75 ns
KM4132G112Q-5/F5	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH				20 mm	4.5 ns
KM4132G512AQ-7	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G512Q-F8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				125 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		6.5 ns
KM4132G271-13	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		140 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				77 MHz		Not Qualified	8388608 bit			e0	.003 Amp	4,8		11 ns
K4G323222M-PC50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4.5 ns
K4G323222A-PL70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
K4G323222M-PL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4.5 ns
KM4132G271AQ-12	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100		3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V					20 mm	12 ns
KM4132G512AQ-C/FC	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3.135 V					20 mm	5 ns
KM4132G512TQ-F8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				125 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		6.5 ns
KM4132G512AQ-10/F0	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words				3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V					20 mm	6 ns
K4G323222M-PC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	230 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100	1	3.6 V	3 mm	143 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH		.002 Amp	4,8	20 mm	5.5 ns
KM4132G271BQR-7	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	6 ns
K4G323222M-PL55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5 ns
KM4132G112Q-F6	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G112Q-FC	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0	.002 Amp	4,8	20 mm	5 ns
K4G323222A-PL45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4 ns
K4G163222A-PC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	5.5 ns
KM4132G271BQR-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	125 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	6.5 ns
KM4132G271BQR-10	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	100 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	7 ns
K4G813222B-PC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	262144 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	143 MHz	14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	6 ns
KM4132G512AQ-F6	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
K4G813222B-UC80	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	6.5 ns
KM4132G112Q-D	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0	.002 Amp	4,8	20 mm	4 ns
KM4132G512Q-8/F8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	6.5 ns
K4D62323HA-QC70T	Samsung	DDR1 DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		370 mA	2097152 words	2,4,8,FP		COMMON		2.5,3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				143 MHz		Not Qualified	67108864 bit			e0	.06 Amp	2,4,8		.75 ns
KM4132G271BTQ-7	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100				143 MHz		Not Qualified	8388608 bit			e0	.002 Amp	4,8		6 ns
K4G163222A-PL50	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		512KX32	512K	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH				20 mm	4.5 ns
KM4132G112Q-8/F8	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		1MX32	1M	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	3 mm		14 mm	Not Qualified	33554432 bit	3 V	AUTO/SELF REFRESH				20 mm	6 ns
K4G323222M-PC45	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	3 mm	222 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.