QFP DRAM 167

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4G323222M-PC60	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	166 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G112Q-5	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	200 MHz	14 mm	Not Qualified	33554432 bit	3.135 V		e0	.002 Amp	4,8	20 mm	4.5 ns
HYB39M83200Q-166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			166 MHz		Not Qualified	8388608 bit			e0	.001 Amp
HYB39M93200Q100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			100 MHz		Not Qualified	9437184 bit			e0	.001 Amp
HYB39M93200Q120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			125 MHz		Not Qualified	9437184 bit			e0
HYB39M93200Q125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			125 MHz		Not Qualified	9437184 bit			e0	.001 Amp
HYB39M83200Q-150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			150 MHz		Not Qualified	8388608 bit			e0
HYB39M93200Q150	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			150 MHz		Not Qualified	9437184 bit			e0
HYB39M83200Q-120	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			125 MHz		Not Qualified	8388608 bit			e0
HYB39M83200Q-133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			133 MHz		Not Qualified	8388608 bit			e0
HYB39M93200Q133	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			133 MHz		Not Qualified	9437184 bit			e0
HYB39M93200Q166	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	294912 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	288KX32	288K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			166 MHz		Not Qualified	9437184 bit			e0	.001 Amp
HYB39M83200Q125	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			125 MHz		Not Qualified	8388608 bit			e0	.001 Amp
HYB39M83200Q-100	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	128	QFP		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		195 mA	262144 words			COMMON	3.3	3.3	32	FLATPACK	QFP128,.67X.93,20	DRAMs	.5 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G128			100 MHz		Not Qualified	8388608 bit			e0	.001 Amp
SDA9253	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64	5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0	.005 Amp		14 mm	25 ns
SDA9254-2	Infineon Technologies	VIDEO DRAM	COMMERCIAL	64	QFP		SQUARE	PLASTIC/EPOXY		YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	217088 words				5	5	12	FLATPACK	QFP64,.66SQ,32	Other Memory ICs	.8 mm	70 Cel		212KX12	212K	0 Cel	TIN LEAD	QUAD	3	S-PQFP-G64	5.5 V	2.45 mm		14 mm	Not Qualified	2605056 bit	4.5 V	16 X 12 SAM PORT	e0	.005 Amp		14 mm	25 ns
UPD481850GF-A12-JBT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			83 MHz		Not Qualified	8388608 bit			e0	.006 Amp	1,2,4,8		11 ns
UPD481850GF-A15-JBT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		285 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			67 MHz		Not Qualified	8388608 bit			e0	.006 Amp			14 ns
HM5216326FP-8	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		330 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		QUAD		R-PQFP-G100			125 MHz		Not Qualified	16777216 bit				.003 Amp	1,2,4,8		7 ns
UPD42S16100Q-110	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0002 Amp			110 ns
UPD4216100Q-100	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0025 Amp			100 ns
UPD4811650GF-A12-9BT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			83 MHz		Not Qualified	16777216 bit			e0	.003 Amp	1,2,4,8		11 ns
UPD481850-13	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			77 MHz		Not Qualified	8388608 bit			e0		4,8		12 ns
UPD42S16100Q-85	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0002 Amp			85 ns
HM5216326FP-10	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		QUAD		R-PQFP-G100			100 MHz		Not Qualified	16777216 bit				.003 Amp	1,2,4,8		7.5 ns
UPD42S16100Q-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0002 Amp			70 ns
HM5283206FP-12	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel		QUAD		R-PQFP-G100			83 MHz		Not Qualified	8388608 bit				.003 Amp	1,2,4,8		8 ns
UPD481850GF-A10-JBT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			100 MHz		Not Qualified	8388608 bit			e0	.006 Amp	1,2,4,8		9 ns
HM5283206FP-10	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		240 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel		QUAD		R-PQFP-G100			100 MHz		Not Qualified	8388608 bit				.003 Amp	1,2,4,8		10 ns
UPD481850-12	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			84 MHz		Not Qualified	8388608 bit			e0		4,8		11 ns
UPD4216100Q-110	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		105 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0025 Amp			110 ns
UPD4811650GF-A10-9BT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			100 MHz		Not Qualified	16777216 bit			e0	.003 Amp	1,2,4,8		10 ns
UPD4216100Q-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		120 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0025 Amp			70 ns
UPD42S16100Q-100	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	16777216 words		YES	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0002 Amp			100 ns
UPD4811650GF-A80-9BT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			125 MHz		Not Qualified	16777216 bit			e0	.003 Amp	1,2,4,8		9 ns
HM5283206FP-8	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		330 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel		QUAD		R-PQFP-G100			125 MHz		Not Qualified	8388608 bit				.003 Amp	1,2,4,8		7 ns
UPD4216100Q-85	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	QFP	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	16777216 words		NO	SEPARATE	5	5	1	FLATPACK	QFP28,.56SQ,50	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G28					Not Qualified	16777216 bit			e0	.0025 Amp			85 ns
UPD4811650GF-A70R-9BT	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		345 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			143 MHz		Not Qualified	16777216 bit			e0	.003 Amp	1,2,4,8		6 ns
UPD481850-10	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel	3-STATE	256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			100 MHz		Not Qualified	8388608 bit			e0		4,8		9 ns
KM4132G112Q-8	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	200 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	125 MHz	14 mm	Not Qualified	33554432 bit	3 V		e0	.002 Amp	4,8	20 mm	6 ns
KM4132G512AQ-5	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	290 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	100 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	4.5 ns
KM4132G512AQ-6	Samsung	VIDEO DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	260 mA	524288 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	166 MHz	14 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5.5 ns
KM4132G271Q-12	Samsung	VIDEO DRAM		100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		32	FLATPACK			.65 mm			256KX32	256K			QUAD	1	R-PQFP-G100	3.6 V	2.45 mm		14 mm	Not Qualified	8388608 bit	3 V					20 mm	12 ns
K4G323222M-PC55	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.65 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	3 mm	183 MHz	14 mm	Not Qualified	33554432 bit	3.135 V	AUTO/SELF REFRESH	e0	.002 Amp	4,8	20 mm	5 ns
K4G813222B-UC70	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100	3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH				20 mm	6 ns
KM4132G512TQ-6	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		310 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9	DRAMs	.5 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			166 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		5.5 ns
KM4132G271BQ-H	Samsung	SYNCHRONOUS GRAPHICS RAM	COMMERCIAL	100	QFP		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		262144 words		YES		3.3		32	FLATPACK			.65 mm	70 Cel		256KX32	256K	0 Cel		QUAD	1	R-PQFP-G100	3.6 V	3 mm		14 mm	Not Qualified	8388608 bit	3 V	AUTO REFRESH/SELF REFRESH				20 mm	6 ns
KM4132G512ATQ-10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	524288 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	TQFP100,.7X.9,25	DRAMs	.635 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100			100 MHz		Not Qualified	16777216 bit			e0	.002 Amp	4,8		6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.