SIMM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

KMM5322104BKUG-7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

360 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

KMM53632004BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1344 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1207959552 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.024 Amp

50 ns

KMM5361205BW/BWG-6

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

1048576 words

5

36

MICROELECTRONIC ASSEMBLY

1MX36

1M

SINGLE

1

R-XSMA-N72

Not Qualified

37748736 bit

60 ns

M53210800CB0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

656 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

60 ns

M53640400CW0-50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

810 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

150994944 bit

.009 Amp

50 ns

M53211600CE0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

YES

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.008 Amp

50 ns

KMM5361205C2WG-50

Samsung

DRAM MODULE

COMMERCIAL

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

YES

5

36

MICROELECTRONIC ASSEMBLY

1.27 mm

70 Cel

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.18 mm

5.08 mm

37748736 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; WD-MAX

107.95 mm

50 ns

KMM53632004AK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1584 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

1207959552 bit

.024 Amp

50 ns

KMM594020B-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

720 mA

4194304 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX9

4M

0 Cel

SINGLE

1

R-XSMA-N72

21.59 mm

Not Qualified

37748736 bit

.0018 Amp

70 ns

KMM536512C-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

804 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

18874368 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.024 Amp

70 ns

M53620405CT0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

330 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

50 ns

KMM591000B-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.447 mm

Not Qualified

9437184 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

70 ns

M53210810CW0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

896 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

50 ns

KMM5402000AG-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

970 mA

2097152 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

2MX40

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

83886080 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.02 Amp

80 ns

M53210810DB0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

816 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

60 ns

KMM5322200CW-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

304 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

KMM5364005CSWG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

M53210400CB0-50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

134217728 bit

.008 Amp

50 ns

KMM5361000B-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.012 Amp

70 ns

KMM584000B-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

640 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.447 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

70 ns

KMM5321204C2WG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

19.05 mm

Not Qualified

33554432 bit

.002 Amp

60 ns

KMM5368003CK-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

738 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

60 ns

KMM5322200BWG-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

284 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

KMM5322204AWG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

324 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

60 ns

KMM581020BN-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

140 mA

1048576 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

16.51 mm

Not Qualified

8388608 bit

.0006 Amp

80 ns

KMM5361000B2-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

1000 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

37748736 bit

.012 Amp

60 ns

KMM5364000B-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

2880 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

32.766 mm

Not Qualified

150994944 bit

.036 Amp

70 ns

KMM5361205BWG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

375 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

37748736 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

KMM5364103CK-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

60 ns

KMM5362203AW/AWG-7

Samsung

FAST PAGE DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

2MX36

2M

SINGLE

1

R-XSMA-N72

Not Qualified

75497472 bit

70 ns

KMM53216000AKG-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1040 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

M53620405CT0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

KMM5322100BKU-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

360 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

M53210224CW2-60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

284 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

19.05 mm

Not Qualified

67108864 bit

.004 Amp

60 ns

KMM594020B-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

810 mA

4194304 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX9

4M

0 Cel

SINGLE

1

R-XSMA-N72

21.59 mm

Not Qualified

37748736 bit

.0018 Amp

60 ns

KMM540512C-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

524288 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

512KX40

512K

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

20971520 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.02 Amp

60 ns

KMM5816100-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

16777216 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

22.86 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

60 ns

KMM5322104BKUG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

440 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

M53231600CJ0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM581000B-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

560 mA

1048576 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.447 mm

Not Qualified

8388608 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

80 ns

KMM591000AN-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

260 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

16.51 mm

Not Qualified

9437184 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.003 Amp

80 ns

M53210810DW0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

896 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

50 ns

KMM5328004CSWG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

244 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

KMM5361003-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

37748736 bit

.009 Amp

70 ns

M53230410CB0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

KMM5362000A1G-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1064 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

31.75 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.024 Amp

80 ns

KMM59257-15

Samsung

NIBBLE MODE DRAM

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

NO LEAD

585 mA

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

R-PSMA-N30

16.51 mm

Not Qualified

2359296 bit

150 ns

KMM53632000CKG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1224 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

1207959552 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.024 Amp

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.