Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
394 mA |
524288 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
Not Qualified |
16777216 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
50 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1020 mA |
2097152 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX40 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
83886080 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.02 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
4194304 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
4MX8 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0016 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
918 mA |
2097152 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
75497472 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
656 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
888 mA |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.014 Amp |
50 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
480 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
700 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
9437184 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.01 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1144 mA |
2097152 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
30.48 mm |
Not Qualified |
75497472 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.024 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
820 mA |
524288 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX40 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
Not Qualified |
20971520 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.02 Amp |
70 ns |
||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
720 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
9437184 bit |
.028 Amp |
100 ns |
||||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
700 mA |
262144 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX40 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
10485760 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.01 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
920 mA |
524288 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX40 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
Not Qualified |
20971520 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.004 Amp |
60 ns |
||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
500 mA |
1048576 words |
COMMON |
5 |
5 |
18 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.006 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
560 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
340 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.011 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
648 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
488 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
PAGE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
NO LEAD |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.51 mm |
Not Qualified |
2097152 bit |
120 ns |
|||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
960 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
TIN LEAD |
SINGLE |
1 |
R-XSMA-N72 |
5.25 V |
Not Qualified |
134217728 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
e0 |
.014 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0016 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
746 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.028 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
600 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.527 mm |
Not Qualified |
9437184 bit |
.01 Amp |
100 ns |
|||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
568 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH |
.0016 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1234 mA |
8388608 words |
YES |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
30.48 mm |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.026 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
480 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH |
.0008 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.02 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
736 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1400 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
816 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0032 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
PAGE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
150 mA |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
12.1412 mm |
Not Qualified |
2359296 bit |
.003 Amp |
120 ns |
|||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1400 mA |
4194304 words |
YES |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.013 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
3600 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
37.084 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.036 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1120 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
30.48 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.012 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
896 mA |
2097152 words |
YES |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0032 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
820 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.02 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1000 mA |
1048576 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX40 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
Not Qualified |
41943040 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.01 Amp |
70 ns |
||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
920 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.02 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2880 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
37.084 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0064 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
888 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0024 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
16777216 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
23.114 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
310 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.011 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2880 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
37.084 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.032 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
120 mA |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
12.1412 mm |
Not Qualified |
2097152 bit |
.002 Amp |
100 ns |
|||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.004 Amp |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.