Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
648 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH |
.0016 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1240 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.4 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0024 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
648 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0016 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1028 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
301989888 bit |
.048 Amp |
70 ns |
||||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
576 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
80 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
270 mA |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
12.954 mm |
Not Qualified |
2359296 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.0006 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
968 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0024 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
960 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
Not Qualified |
134217728 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.014 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
3240 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
37.084 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.036 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1170 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.005 Amp |
60 ns |
||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
180 mA |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
12.1412 mm |
Not Qualified |
2359296 bit |
.003 Amp |
100 ns |
|||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
816 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
354 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
NIBBLE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
NO LEAD |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.51 mm |
Not Qualified |
2359296 bit |
200 ns |
|||||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
630 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
9437184 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
80 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
310 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.011 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
NIBBLE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
NO LEAD |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.51 mm |
Not Qualified |
2359296 bit |
100 ns |
|||||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
738 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX36 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
18874368 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
394 mA |
524288 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.25 V |
Not Qualified |
16777216 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
50 ns |
|||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
488 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
80 ns |
|||||||||||||||||
Micron Technology |
NIBBLE MODE DRAM |
COMMERCIAL |
30 |
SIMM |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
NO LEAD |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
R-PSMA-N30 |
16.51 mm |
Not Qualified |
2359296 bit |
120 ns |
|||||||||||||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
324 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1434 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
TIN LEAD |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
30.48 mm |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.036 Amp |
60 ns |
||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1064 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
34.544 mm |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.024 Amp |
80 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
3600 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
37.084 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0072 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
324 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
968 mA |
8388608 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
268435456 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
960 mA |
4194304 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
Not Qualified |
134217728 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0012 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
16777216 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
23.114 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1400 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0016 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0008 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
480 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH |
.0008 Amp |
80 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1240 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
18 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
30.48 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0024 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
736 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.654 mm |
Not Qualified |
16777216 bit |
.016 Amp |
60 ns |
||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
520 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.0006 Amp |
60 ns |
||||||||||||||||||
Micron Technology |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
360 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.011 Amp |
50 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
976 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
34.544 mm |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
700 mA |
262144 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.527 mm |
Not Qualified |
9437184 bit |
.01 Amp |
85 ns |
|||||||||||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
900 mA |
262144 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX40 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
10485760 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0016 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
25.654 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0016 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
324 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
70 ns |
|||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
20.574 mm |
Not Qualified |
8388608 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH |
.0016 Amp |
70 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
1 |
5.5 V |
12.954 mm |
Not Qualified |
2097152 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
560 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
1 |
3.6 V |
25.654 mm |
Not Qualified |
33554432 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.004 Amp |
70 ns |
||||||||||||||||||
Micron Technology |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
300 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.654 mm |
Not Qualified |
8388608 bit |
.002 Amp |
80 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.