SIMM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

KMM5321000BV-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

640 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

21.59 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

70 ns

KMM5328004BK/BKG-7

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

8388608 words

5

32

MICROELECTRONIC ASSEMBLY

8MX32

8M

SINGLE

1

R-XSMA-N72

Not Qualified

268435456 bit

70 ns

KMM5816000-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

16777216 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

16MX8

16M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

22.86 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

60 ns

KMM5321204BW/BWG-7

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

1048576 words

5

32

MICROELECTRONIC ASSEMBLY

1MX32

1M

SINGLE

1

R-XSMA-N72

Not Qualified

33554432 bit

70 ns

KMM536512CH-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

640 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

18874368 bit

.018 Amp

60 ns

KMM581000BN-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

140 mA

1048576 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

16.51 mm

Not Qualified

8388608 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.002 Amp

80 ns

KMM5361000A1-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1160 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.012 Amp

70 ns

KMM5328000BK-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

656 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

KMM5361000BV-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

1000 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

31.75 mm

Not Qualified

37748736 bit

.008 Amp

60 ns

KMM53232004BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

976 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1073741824 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

KMM5328100BK-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

736 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

70 ns

KMM5322000AV-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

776 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

21.717 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.016 Amp

80 ns

KMM5362000B2-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

824 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

75497472 bit

.024 Amp

80 ns

KMM5401000B-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

1048576 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

1MX40

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

41943040 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.01 Amp

60 ns

KMM5364000B-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

3240 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

32.766 mm

Not Qualified

150994944 bit

.036 Amp

60 ns

KMM5324100CKG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH

.008 Amp

60 ns

KMM5322000BVG-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

576 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.016 Amp

80 ns

M53611600BW0-C600

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1200 mA

16777216 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX36

16M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

603979776 bit

.012 Amp

60 ns

KMM53216000BKG-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM5362203C2WG-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

391 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

19.05 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

50 ns

M53230410DB0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

KMM5321000AVG-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

840 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

21.717 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

70 ns

M53640405CY0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

330 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

50 ns

KMM5322000AV-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

856 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

21.717 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.016 Amp

70 ns

KMM5916000-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

630 mA

16777216 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

16MX9

16M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

22.86 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.009 Amp

80 ns

KMM5364003CSW-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

330 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

50 ns

KMM5364005BK-7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

70 ns

KMM5364003ASW-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

390 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

150994944 bit

.003 Amp

50 ns

KMM5321204C2WG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

300 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

19.05 mm

Not Qualified

33554432 bit

.002 Amp

50 ns

KMM5364100HG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

31.75 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.009 Amp

60 ns

KMM5361000B-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.012 Amp

80 ns

KMM53216004CK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

M53620800CW0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

918 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

60 ns

KMM5368100G-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

1264 mA

8388608 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

34.925 mm

Not Qualified

301989888 bit

.024 Amp

60 ns

KMM53616000AKG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1440 mA

16777216 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX36

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

603979776 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

60 ns

KMM5362203BW-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

381 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

60 ns

KMM5368103CK-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1008 mA

8388608 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

50 ns

KMM584000A-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

840 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.447 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.008 Amp

70 ns

KMM5364105CKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

M53211600CJ0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

16777216 words

YES

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.008 Amp

60 ns

M53230224DJ2-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

304 mA

2097152 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

KMM5364000HG-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

630 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

31.75 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.009 Amp

80 ns

KMM5364005BKG-7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

70 ns

KMM5328004BKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

816 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

M53210400CB0-60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

640 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

134217728 bit

.008 Amp

60 ns

KMM5324000VG-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

640 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

134217728 bit

.008 Amp

70 ns

KMM536256W-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

260 mA

262144 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

256KX36

256K

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

9437184 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.002 Amp

70 ns

M53613201BJ0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1224 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1207959552 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.024 Amp

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.