SIMM DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

KMM53216004BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM5328104CKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

816 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

KMM5324004ASW-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

134217728 bit

.004 Amp

60 ns

KMM5361000B2G-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

1000 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

37748736 bit

.012 Amp

60 ns

KMM5362203BW-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

371 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

70 ns

KMM5364105CK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

KMM5322204BWG-7

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

284 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

70 ns

M53640405BT0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

60 ns

M53233200BE0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

976 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1073741824 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

KMM59257-12

Samsung

NIBBLE MODE DRAM

COMMERCIAL

30

SIMM

256

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

NO LEAD

675 mA

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

R-PSMA-N30

16.51 mm

Not Qualified

2359296 bit

120 ns

KMM5321200BWG-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

280 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

70 ns

KMM5328000VG-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

576 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

25.4 mm

Not Qualified

268435456 bit

.016 Amp

80 ns

KMM53232000CK-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

896 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1073741824 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

M53230410DW0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

M53620800CB0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1008 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.018 Amp

50 ns

M53210800DW0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

736 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

50 ns

KMM5368003BSWG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

306 mA

8388608 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX36

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

301989888 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.006 Amp

60 ns

KMM53632004AKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1584 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

1207959552 bit

.024 Amp

50 ns

KMM5364105BKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

60 ns

KMM53616004AKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1440 mA

16777216 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX36

16M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

603979776 bit

.012 Amp

60 ns

KMM53616004BKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1200 mA

16777216 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX36

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

603979776 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

60 ns

M53210404CT0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

240 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.002 Amp

50 ns

KMM5362000BG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1024 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

31.75 mm

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.024 Amp

60 ns

M53620412CW0-C50

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

990 mA

4194304 words

YES

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

.009 Amp

50 ns

KMM5324104BKG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

KMM5322200BW/BWG-6

Samsung

FAST PAGE DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

2MX32

2M

SINGLE

1

R-XSMA-N72

Not Qualified

67108864 bit

60 ns

KMM5364005BSW-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH

.003 Amp

60 ns

KMM5324100BK-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

70 ns

KMM5328004BSW-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

244 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

50 ns

M53210800DW0-C60

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

656 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

.016 Amp

60 ns

KMM540512CM-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

620 mA

524288 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

512KX40

512K

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

20971520 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.02 Amp

80 ns

KMM5364005BKG-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

900 mA

4194304 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

50 ns

KMM53232004AK-5

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1216 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

1073741824 bit

.016 Amp

50 ns

KMM53216000CK-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

960 mA

16777216 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

16MX32

16M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

536870912 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

M53230400DW0-C60

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

640 mA

4194304 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

M53633200BW0-C600

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1224 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

1207959552 bit

.024 Amp

60 ns

KMM5324100BK/BKG-6

Samsung

FAST PAGE DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

4194304 words

5

32

MICROELECTRONIC ASSEMBLY

4MX32

4M

SINGLE

1

R-XSMA-N72

Not Qualified

134217728 bit

60 ns

KMM53232000AKG-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1216 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

1073741824 bit

.016 Amp

50 ns

KMM53632000CK-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1224 mA

33554432 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX36

32M

0 Cel

DUAL

1

R-XDMA-N72

5.5 V

Not Qualified

1207959552 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.024 Amp

60 ns

M53233200BJ0-C50

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

976 mA

33554432 words

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

32MX32

32M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

1073741824 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

50 ns

KMM532512BV-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1280 mA

524288 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX32

512K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

16777216 bit

.016 Amp

70 ns

KMM5328000BKG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

656 mA

8388608 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

8MX32

8M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

268435456 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.016 Amp

60 ns

KMM5321204BWG-6

Samsung

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

300 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

19.05 mm

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.002 Amp

60 ns

KMM5364005BK/BKG-6

Samsung

EDO DRAM MODULE

72

SIMM

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

4194304 words

5

36

MICROELECTRONIC ASSEMBLY

4MX36

4M

SINGLE

1

R-XSMA-N72

Not Qualified

150994944 bit

60 ns

KMM5402000BG-6

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

920 mA

2097152 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

2MX40

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

83886080 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.02 Amp

60 ns

KMM5916100-8

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

810 mA

16777216 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

16MX9

16M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

22.86 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.009 Amp

80 ns

KMM5324100BKG-5

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

880 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

16

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

50 ns

KMM5401000A-7

Samsung

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1050 mA

1048576 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

Other Memory ICs

1.27 mm

70 Cel

3-STATE

1MX40

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

41943040 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

.01 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.