Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1040 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.012 Amp |
80 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
990 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.009 Amp |
50 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
304 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
19.05 mm |
Not Qualified |
67108864 bit |
.004 Amp |
50 ns |
||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1464 mA |
33554432 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX36 |
32M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
1207959552 bit |
.024 Amp |
60 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1264 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
34.925 mm |
Not Qualified |
301989888 bit |
.024 Amp |
60 ns |
||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
816 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
60 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
4194304 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
4MX32 |
4M |
SINGLE |
1 |
R-XSMA-N72 |
Not Qualified |
134217728 bit |
70 ns |
|||||||||||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
225 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
16.51 mm |
Not Qualified |
9437184 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.003 Amp |
70 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
576 mA |
524288 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
828 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
1MX36 |
1M |
SINGLE |
1 |
R-XSMA-N72 |
Not Qualified |
37748736 bit |
60 ns |
|||||||||||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
220 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1320 mA |
16777216 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX36 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
603979776 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
50 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
304 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
19.05 mm |
Not Qualified |
67108864 bit |
.004 Amp |
50 ns |
||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1200 mA |
16777216 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX36 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
603979776 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.012 Amp |
60 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
736 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
25.4 mm |
Not Qualified |
268435456 bit |
.016 Amp |
60 ns |
|||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
990 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
150994944 bit |
.009 Amp |
50 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
220 mA |
262144 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
25.4 mm |
Not Qualified |
8388608 bit |
.002 Amp |
80 ns |
||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
70 ns |
|||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
396 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
301989888 bit |
.006 Amp |
50 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
896 mA |
8388608 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
50 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
304 mA |
2097152 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
67108864 bit |
.004 Amp |
50 ns |
||||||||||||||||||||||||||||
Samsung |
DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
1.27 mm |
70 Cel |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.53 mm |
5.08 mm |
150994944 bit |
4.5 V |
CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX |
107.95 mm |
60 ns |
|||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
205 mA |
262144 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX9 |
256K |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
16.51 mm |
Not Qualified |
2359296 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
70 ns |
|||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
280 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
19.05 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
70 ns |
||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
810 mA |
16777216 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16MX9 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
22.86 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.009 Amp |
80 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
4194304 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
4MX32 |
4M |
SINGLE |
1 |
R-XSMA-N72 |
Not Qualified |
134217728 bit |
70 ns |
|||||||||||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3040 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
32.766 mm |
Not Qualified |
134217728 bit |
.032 Amp |
80 ns |
|||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
640 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
70 ns |
||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
960 mA |
16777216 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX32 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
536870912 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.008 Amp |
50 ns |
|||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
220 mA |
4194304 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4194304 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
1.27 mm |
70 Cel |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.53 mm |
5.08 mm |
150994944 bit |
4.5 V |
CAS BEFORE RAS/RAS ONLY/HIDDEN REFRESH; WD-MAX |
107.95 mm |
50 ns |
|||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
880 mA |
4194304 words |
YES |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.008 Amp |
50 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1000 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.012 Amp |
80 ns |
|||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
720 mA |
16777216 words |
COMMON |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16MX8 |
16M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
22.86 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.008 Amp |
80 ns |
||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
736 mA |
8388608 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
268435456 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
50 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
585 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
20.447 mm |
Not Qualified |
9437184 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.009 Amp |
70 ns |
||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
896 mA |
33554432 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX32 |
32M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
1073741824 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
240 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
134217728 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
50 ns |
|||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
306 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.006 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
320 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
19.05 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
60 ns |
|||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
648 mA |
8388608 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX36 |
8M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
301989888 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.018 Amp |
70 ns |
||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
816 mA |
8388608 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX32 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
Not Qualified |
268435456 bit |
.016 Amp |
60 ns |
||||||||||||||||||||||||||||
Samsung |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
990 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
.009 Amp |
50 ns |
||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
900 mA |
1048576 words |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
1MX40 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
41943040 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
.01 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
300 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.003 Amp |
60 ns |
|||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
450 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
SINGLE |
R-PSMA-N30 |
Not Qualified |
9437184 bit |
.009 Amp |
120 ns |
||||||||||||||||||||||||||||
Samsung |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
4096 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
300 mA |
4194304 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
150994944 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.003 Amp |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.