SOJ DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS44101-60DJ	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	4194304 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns
TMS418169-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	190 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	60 ns
TMS45165L-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE WRITE	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	80 ns
TMS44100-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	80 ns
TMS426800AP-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		70 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL		R-PDSO-J32				Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		60 ns
TMS426400DJ-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS				17.145 mm	60 ns
TMS44100-70DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS417809-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				18.415 mm	60 ns
TMS416169P-80DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	1048576 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	27.305 mm	80 ns
TMS417400DJ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS				17.145 mm	70 ns
TMX44C257-12DJ	Texas Instruments	STATIC COLUMN DRAM		20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm		3-STATE	256KX4	256K		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V					17.145 mm	120 ns
TMS426100P-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words	YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				17.145 mm	80 ns
TMS44400P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	105 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	60 ns
TMS427400-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	80 ns
SMJ4C1024-15HJM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	SYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-J20	5.5 V	3.48 mm	8.382 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.145 mm	150 ns
TMX44C256-10DJ	Texas Instruments	FAST PAGE DRAM		20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm		3-STATE	256KX4	256K		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V					17.145 mm	100 ns
TMX44C256-15DJ	Texas Instruments	FAST PAGE DRAM		20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE			1.27 mm		3-STATE	256KX4	256K		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V					17.145 mm	150 ns
TMS44C256-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	75 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	80 ns
TMS417800A-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS		J BEND	ASYNCHRONOUS	100 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.415 mm	70 ns
TMS417400P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	4194304 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	70 ns
TMS46100P-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	50 mA	4194304 words	YES	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	3.6 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	17.145 mm	80 ns
TMS416800A-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		70 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL		R-PDSO-J32				Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS428160A-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		140 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42				Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS44800P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		524288 words	YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				18.415 mm	80 ns
TMS416169A-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	130 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	50 ns
TMS428160AP-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		170 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42				Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		50 ns
TMS417809A-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.415 mm	70 ns
TMS44400P-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	80 ns
TMS417800-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				18.415 mm	70 ns
TMS416409-80DJ	Texas Instruments	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.145 mm	80 ns
TMS416400-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.415 mm	100 ns
TMS427809AP-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		120 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL		R-PDSO-J28				Not Qualified	16777216 bit					.00015 Amp		50 ns
TMS417400-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				18.415 mm	70 ns
TMS427400A-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	50 ns
TMS44400-80DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	75 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	80 ns
TMS426160P-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	27.305 mm	70 ns
SMJ4C1024-12HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-J20	5.5 V	3.48 mm	8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.145 mm	120 ns
TMS418169A-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		J BEND	ASYNCHRONOUS	180 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	50 ns
TMS48C138-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	17.145 mm	70 ns
TMS4C1027-10DN	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	1.83 mm	7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	16.51 mm	100 ns
TMS4C1024-12DJL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.145 mm	120 ns
TMS464800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		8388608 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				20.955 mm	80 ns
TMS416100-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS426400DJ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words			3.3		4	SMALL OUTLINE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS				17.145 mm	70 ns
TMS418160A-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS		J BEND	ASYNCHRONOUS	180 mA	1048576 words	NO	COMMON	5	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	50 ns
TMS44800L-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.415 mm	100 ns
TMS426400A-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	4194304 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	50 ns
TMS416400-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.