SOJ DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TMS45160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

140 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

1

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.00035 Amp

26.035 mm

80 ns

TMS464800-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.955 mm

60 ns

TMS44400-10DM

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

65 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

100 ns

TMS418160-60RE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

27.38 mm

60 ns

TMS416400PDJ-60

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS/SELF REFRESH

17.145 mm

60 ns

TMS44800-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

60 ns

TMS416400-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

80 ns

TMS416100-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

16777216 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX1

16M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

80 ns

TMS45160L-10DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

1

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE ACCESS

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

26.035 mm

100 ns

5962-9061704MXA

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SOJ

RECTANGULAR

UNSPECIFIED

FAST PAGE

YES

1

CMOS

MIL-STD-883

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

256KX4

256K

-55 Cel

TIN LEAD

DUAL

1

R-XDSO-J20

5.5 V

2.54 mm

8.385 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.145 mm

70 ns

TMS427400A-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

70 ns

TMS426169P-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

70 ns

TMS4C1027-10DJL

Texas Instruments

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

100 ns

TMS416400DJ-70

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS

17.145 mm

70 ns

TMS44410-10DM

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

65 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

100 ns

TMS416169P-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

60 ns

TMS44460P-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

70 ns

TMS4C1025DJ-15

Texas Instruments

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

150 ns

TMS416160A-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

60 ns

TMS416409-70DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

70 ns

TMS417400DJ-80

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS

17.145 mm

80 ns

TMS48C121-80DZ

Texas Instruments

VIDEO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

131072 words

5

5

8

SMALL OUTLINE

SOJ40,.44

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

2

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.01 Amp

26.035 mm

80 ns

TMS427809AP-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

.00015 Amp

70 ns

TMS417400A-60DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

MOS

J BEND

ASYNCHRONOUS

110 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

60 ns

TMS428160-80RE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

27.38 mm

80 ns

TMS426160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

80 ns

TMS427809AP-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

.00015 Amp

60 ns

TMS4C1025-10DJ

Texas Instruments

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

YES

1

CMOS

J BEND

ASYNCHRONOUS

65 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

17.145 mm

100 ns

TMS45165S-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

140 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

1

R-PDSO-J40

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE WRITE

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

26.035 mm

80 ns

5962-01-346-7327

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SOJ

512

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

J BEND

60 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

R-XDSO-J20

Not Qualified

1048576 bit

NOT SPECIFIED

NOT SPECIFIED

.003 Amp

120 ns

TMS416160-60RE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

27.38 mm

60 ns

TMS426800-70DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

18.415 mm

70 ns

TMS4C1024-15DJL

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

150 ns

TMS44C250-10DZL

Texas Instruments

VIDEO DRAM

COMMERCIAL

28

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

DUAL

2

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT

18.415 mm

100 ns

TMS418169P-60DZ

Texas Instruments

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

190 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

60 ns

TMS48C128-70DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

85 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

17.145 mm

70 ns

TMS45169P-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

160 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.00035 Amp

70 ns

TMS428160P-60DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

190 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

60 ns

TMS416160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

70 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

27.305 mm

80 ns

TMX4C1024-15DJ

Texas Instruments

FAST PAGE DRAM

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

3-STATE

1MX1

1M

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

17.145 mm

150 ns

TMS464160P-80DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

20.955 mm

80 ns

TMS44C256-10DJL

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

256KX4

256K

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

100 ns

TMS44460P-80DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

80 ns

TMS416400PDJ-70

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

YES

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

CAS BEFORE RAS/SELF REFRESH

17.145 mm

70 ns

TMS427800A-50DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

32

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

2097152 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-J32

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

50 ns

TMS416100P-60DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

60 ns

TMX4C1029-15DJ

Texas Instruments

NIBBLE MODE DRAM

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE

1.27 mm

3-STATE

1MX1

1M

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.57 mm

Not Qualified

1048576 bit

4.5 V

17.145 mm

150 ns

SMJ44C251B-12HJM

Texas Instruments

VIDEO DRAM

MILITARY

28

SOJ

512

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

J BEND

ASYNCHRONOUS

100 mA

262144 words

5

5

4

SMALL OUTLINE

SOJ28,.4

Other Memory ICs

1.27 mm

125 Cel

3-STATE

256KX4

256K

-55 Cel

DUAL

2

R-CDSO-J28

5.5 V

4.52 mm

10.541 mm

Not Qualified

1048576 bit

4.5 V

CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.015 Amp

18.542 mm

120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.