TBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT44K32M18PA-125E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.35		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH						13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT46V16M8FJ-75Z	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	325 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	16 mm	.75 ns
MT46V16M16CV-5BAIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH						12.5 mm
MT46V32M16FN-75ZIT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V32M8FG-6IT:G	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	410 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	14 mm	.7 ns
MT46V16M16FJ-6HIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX16	16M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0					16 mm	.7 ns
MT46V32M4BJ-75:A	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX4	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1					16 mm	.75 ns
MT46V16M16CY-6LIT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	167 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	12.5 mm	.7 ns
MT46V16M16FJ-75H	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	9 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	16 mm	.75 ns
MT46V64M8BN-6:D	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	405 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V128M4BN-75ZL:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V32M8FJ-75LH	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	365 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	9 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	16 mm	.75 ns
MT46V32M8CY-5BIT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	12.5 mm	.7 ns
MT46V128M4BN-75L:D	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V8M16BJ-75L:A	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		8MX16	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1					16 mm	.75 ns
MT46V16M16BJ-75EHIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					16 mm	.75 ns
MT46V16M16CY-5BIT:MT	Micron Technology	DDR1 DRAM		60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	290 mA	16777216 words	2,4,8	YES	COMMON	2.6		16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32		1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260	.004 Amp	2,4,8	12.5 mm	.7 ns
MT46V64M8FN-5BLIT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V16M16FG-6LIT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	440 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	167 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	14 mm	.7 ns
MT46V16M16BG-75ZL:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	380 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	14 mm	.75 ns
MT46V128M4FN-75E:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V32M16BN-75ZAT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					12.5 mm	.75 ns
MT46V32M16FN-75ELAT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1					12.5 mm	.75 ns
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		32MX18	32M	0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT46V16M16FG-6ITH	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					14 mm	.7 ns
MT46V64M4FG-5BL:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6	2.6	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0				2,4,8	14 mm	.7 ns
MT46V64M8BN-5BIT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.6	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V64M8BN-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	167 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V16M8FJ-75EL:D	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0					16 mm	.75 ns
MT46V64M8BN-75ZIT:D	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V16M8BJ-6:A	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1					16 mm	.7 ns
MT46V64M4FJ-6	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	167 MHz	9 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	16 mm	.7 ns
MT46V32M16FN-75L:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V32M8BG-75LIT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	365 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	14 mm	.75 ns
MT46V64M8FN-75EIT:D	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.75 ns
MT46V64M4FG-75Z	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	14 mm	.75 ns
MT46V16M8BJ-6LIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	355 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	167 MHz	9 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH			260	.003 Amp	2,4,8	16 mm	.7 ns
MT46V32M8BG-6T:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						14 mm	.7 ns
MT46V16M16FG-6:G	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX16	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0					14 mm	.7 ns
MT46V16M16CV-5BAT:K	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				2.6		16	GRID ARRAY, THIN PROFILE			1 mm	105 Cel		16MX16	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO REFRESH	e0					12.5 mm	.7 ns
MT46V128M4FN-6LIT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	405 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M8BG-75EAT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				2.5		8	GRID ARRAY, THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	536870912 bit	2.3 V	AUTO REFRESH	e1					14 mm	.75 ns
MT46V32M8FG-75L:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	365 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	14 mm	.75 ns
MT46V64M8FN-6T:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX8	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					12.5 mm	.7 ns
MT46V32M8FG-75E:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	14 mm	.75 ns
MT46V64M4FG-75EIT	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	14 mm	.75 ns
MT46V16M16FG-75ZH	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	14 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.