TBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
W958D8NBYA5I	Winbond Electronics	HYPERRAM		24	TBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		SYNCHRONOUS	22 mA	33554432 words		YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1.2 mm	200 MHz	6 mm		268435456 bit	1.7 V					.0012 Amp		8 mm
W956D8MBYA5I	Winbond Electronics	HYPERRAM		24	TBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL		SYNCHRONOUS	30 mA	8388608 words		YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1.2 mm	200 MHz	6 mm		67108864 bit	1.7 V	AUTO/SELF REFRESH				.00025 Amp		8 mm
MT46V32M16CV-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0	30	235	.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V16M16BG-6IT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	440 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	167 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.004 Amp	2,4,8	14 mm	.7 ns
MT46V16M16CY-5BIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	175 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260	.004 Amp	2,4,8	12.5 mm	.7 ns
MT44K16M36RB-093:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES		1.35		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT49H8M36BM-25E:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	700 mA	8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX36	8M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
UPD48576218F1-E24-DW1-A	Renesas Electronics	SYNCHRONOUS DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	371 mA	33554432 words	2,4,8	NO	COMMON	1.8		18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		1 mm	95 Cel		32MX18	32M	0 Cel	TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm		603979776 bit	1.7 V	AUTO REFRESH, TERM PITCH-MAX	e6			.215 Amp	2,4,8	18.5 mm
MT46V32M16CY-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.7 ns
IS43R16320D-6BL	Integrated Silicon Solution	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	370 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.025 Amp	2,4,8	13 mm	.7 ns
MT44K16M36RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm		603979776 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K32M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT46V32M16BN-6:F	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	405 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	30	260	.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16BN-6IT:F	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	405 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16CY-5BLIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16FN-5B:C	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words	2,4,8	YES	COMMON	2.6	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V64M8CY-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	230 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.6	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260	.005 Amp	2,4,8	12.5 mm	.7 ns
MT49H16M36SJ-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm
MT49H16M36SJ-18IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX	e1	30	260			18.5 mm
HYB18RL28809AC-2.5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL28836AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL25616AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH						18.5 mm	30 ns
HYB18RL28818AC-2.5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL28809AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL25632AC-4	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX32	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	250 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH	e0					18.5 mm	24 ns
HYB18RL28836AC-2.5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL25616AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX16	16M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH	e0					18.5 mm	20 ns
HYB18RL28818AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL28836AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			8MX36	8M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL28818AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL25632AC-5	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX32	8M			BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH						18.5 mm	30 ns
HYB18RL28809AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm			32MX9	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
HYB18RL25616AC-4	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX16	16M			BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	250 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH						18.5 mm	24 ns
HYB18RL25632AC-3.3	Infineon Technologies	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	8MX32	8M		TIN LEAD	BOTTOM	1	R-PBGA-B144		1.85 V	1.2 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.75 V	AUTO REFRESH	e0					18.5 mm	20 ns
HYB25D512160CFL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.7 ns
HYB25D1G800ACL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68		2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D256800BC-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	210 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.007 Amp	2,4,8	12 mm	.8 ns
HYB25D256400BFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		67108864 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.5 ns
HYB25D256400BF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.7 ns
HYB25D128800CC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.7 ns
HYB25D512800CFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		67108864 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
HYB25M288180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	45 ns
HYB25D256800BFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D128800CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX8	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.5 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
HYB25D256800BF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25R144180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL		SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	40 ns
HYB25D256400BC-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL		SYNCHRONOUS	210 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	100 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.007 Amp	2,4,8	12 mm	.8 ns
HYB25M288180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL		SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	53 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.