TBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
HYB25D512800CC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.7 ns
HYB25D256400CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.7 ns
HYB25D1G400AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D512800CC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						12 mm	.5 ns
HYB25D512400BC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.6	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,6X15,32	DRAMs	1 mm	70 Cel		3-STATE	128MX4	128M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	12 mm	.5 ns
HYB25D256800BF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D256800BCL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	143 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.008 Amp	2,4,8	12 mm	.75 ns
HYB25R288180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	53 ns
HYB25D512400CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						12 mm	.5 ns
HYB25D256800BCL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	143 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.008 Amp	2,4,8	12 mm	.75 ns
HYB25D1G800ACL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D256400BF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D256800BCL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.007 Amp	2,4,8	12 mm	.8 ns
HYB25D128800CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			16MX8	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1					12 mm	.7 ns
HYB25D256160BCL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	143 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.008 Amp	2,4,8	12 mm	.75 ns
HYB25D256400BFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D1G800AC-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.75 ns
HYB25D256400CC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	215 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12 mm	.7 ns
HYB25D256400BF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D1G400AFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25R288180C-840	Infineon Technologies	RAMBUS DRAM		62	TBGA		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA66,10X13,32	DRAMs	.8 mm			3-STATE	16MX18	16M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	301989888 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	40 ns
HYB25D512800BC-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	64MX8	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.004 Amp	2,4,8	12 mm	.7 ns
HYB25D1G800AF-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D256800BCL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.009 Amp	2,4,8	12 mm	.7 ns
HYB25D256800CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	215 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1			.005 Amp	2,4,8	12 mm	.7 ns
HYB25D256160BCL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	285 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.009 Amp	2,4,8	12 mm	.7 ns
HYB25R128160C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	53 ns
HYB25D256800BFL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.8 ns
HYB25D256800BF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.7 ns
HYB25M144180C-653	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	600 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	53 ns
HYB25D256400BC-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	64MX4	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.008 Amp	2,4,8	12 mm	.75 ns
HYB25D1G800AC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			18 mm	.7 ns
HYB25D1G800AFL-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D512800CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						12 mm	.5 ns
HYB25D256160BCL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.007 Amp	2,4,8	12 mm	.8 ns
HYB25D1G800AFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25R144180C-745	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	711 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	45 ns
HYB25R144180C-845	Infineon Technologies	RAMBUS DRAM		62	TBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1.05 mm	800 MHz	10.5 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0					11 mm	45 ns
HYB25D256800BFL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.75 ns
HYB25D1G800AF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25D256800CF-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1					12 mm	.5 ns
HYB25D1G800AFL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e1					18 mm	.7 ns
HYB25DC128160CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			8MX16	8M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						12 mm	.7 ns
HYB25D1G400AF-7F	Infineon Technologies	DDR1 DRAM	COMMERCIAL	68	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	2.7 V	1.2 mm		10 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH	e1					18 mm	.75 ns
HYB25D256400CC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel		3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12 mm	.5 ns
HYB25D256800BF-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX8	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.8 ns
HYB25D128400CF-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			32MX4	32M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			12 mm	.7 ns
HYB25D512400CC-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel			128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						12 mm	.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.