TFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
NT5TU64M16DG-3CI	Nanya Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH				.009 Amp	4,8	13 mm	.45 ns
AS4C64M16D2A-25BIN	Alliance Memory	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	20	265			12.5 mm
IS43DR16320C-25DBLI	Integrated Silicon Solution	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	370 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.013 Amp	4,8	12.5 mm	.4 ns
K4A8G165WC-BCTD	Samsung	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	204 mA	536870912 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.011 Amp	8	13.3 mm
MT47H64M16HR-3IT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.007 Amp	4,8	12.5 mm	.45 ns
MT47H64M16HR-3L:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.45 ns
H5TC4G63CFR-PBA	Sk Hynix	DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		20	260			13 mm
IS42S16800F-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	8 mm	5.4 ns
IS42S16800F-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	8 mm	5.4 ns
MT41J128M16HA-15E:DTR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J128M16JT-125	Micron Technology	DDR3 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm			128MX16	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260		8	14 mm
MT41J128M16JT-125AAT:K	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		8 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
NT5CC256M16CP-DI	Nanya Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp	8	13 mm	.225 ns
IS42S32400F-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	160 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.002 Amp	1,2,4,8	13 mm	5.4 ns
IS43TR16512BL-125KBLI-TR	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	95 mA	536870912 words	4,8	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.055 Amp	4,8	14 mm
MT40A1G8SA-062E:ETR	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A256M16GE-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	69 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	14 mm
NT5CC256M16CP-DII	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.016 Amp	8	13 mm	.225 ns
AS4C256M16D3C-12BIN	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	190 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.425 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V		e1	30	260	.008 Amp	4,8	13.5 mm
AS4C256M16D3C-12BINTR	Alliance Memory	DDR3 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	190 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V		e1	30	260	.008 Amp	4,8	13.5 mm
AS4C256M16D3LC-12BCNTR	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	235 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.283 V		e1	30	260	.008 Amp	4,8	13.5 mm
AS4C512M16D3L-12BCNTR	Alliance Memory	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	512MX16	512M	1.283 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		8589934592 bit	1.283 V		e1			.011 Amp	4,8	14 mm
IS43TR16256BL-125KBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			13 mm
MT41K128M16JT-125IT	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		30	260			14 mm
MT47H32M16HR-25EIT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M16HR-25EIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	440 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12.5 mm	.4 ns
AS4C64M16D2A-25BCNTR	Alliance Memory	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel	3-STATE	64MX16	64M	1.7 V	0 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH				.01 Amp	4,8	12.5 mm	.4 ns
IS42S32800J-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	85 Cel	3-STATE	8MX32	8M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm	143 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS43TR16128B-15HBLI	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS	286 mA	134217728 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.014 Amp	4,8	13 mm	.255 ns
MT47H64M16HR-3:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
AS4C512M16D3LA-10BCNTR	Alliance Memory	DDR DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm		9 mm		8589934592 bit	1.275 V	AUTO/SELF REFRESH						13.5 mm
AS4C64M16D3LB-12BIN	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
AS4C64M16D3LB-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
IS42S16320D-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32800J-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel	3-STATE	8MX32	8M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm	143 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
MT40A2G16SKL-062E:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	392 mA	2147483648 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		2GX16	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10.5 mm		34359738368 bit	1.14 V		e1	30	260	.086 Amp		13 mm
MT40A2G8VA-062EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT41K256M8DA-125AUT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	125 Cel		256MX8	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT47H32M16NF-25E:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.01 Amp	4,8	12.5 mm	.4 ns
IS42S32800J-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	190 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	85 Cel	3-STATE	8MX32	8M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm	166 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
MT41J256M16RE-15EIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	285 mA	268435456 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	10 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp	8	14 mm	.255 ns
AS4C64M16D2A-25BCN	Alliance Memory	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	20	265			12.5 mm
IS42S32800J-7BL-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		8MX32	8M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260			13 mm	5.4 ns
MT40A256M16GE-083EAUT:B	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	76 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.062 Amp	8	14 mm
MT40A2G16TBB-062E:F	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	400 mA	2147483648 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		2GX16	2G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm		34359738368 bit	1.14 V			30	260	.076 Amp		13 mm
W972GG6KB25I	Winbond Electronics	DDR2 DRAM		84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	134217728 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	95 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.05 Amp	4,8	12.5 mm	.4 ns
AS4C16M16SA-7BCN	Alliance Memory	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	55 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	70 Cel		16MX16	16M		0 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm	143 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH				.02 Amp	1,2,4,8	8 mm	5.4 ns
AS4C32M16D2A-25BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M		0 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.