Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
8MX16 |
8M |
-40 Cel |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
134217728 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
67108864 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX16 |
16M |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G54 |
2 |
133 MHz |
Not Qualified |
268435456 bit |
e6 |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX16 |
8M |
0 Cel |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
134217728 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
8MX16 |
8M |
-40 Cel |
DUAL |
R-PDSO-G54 |
166 MHz |
Not Qualified |
134217728 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
8MX16 |
8M |
-40 Cel |
DUAL |
R-PDSO-G54 |
3 |
133 MHz |
Not Qualified |
134217728 bit |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
R-PDSO-G54 |
166 MHz |
Not Qualified |
67108864 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX16 |
8M |
0 Cel |
DUAL |
R-PDSO-G54 |
166 MHz |
Not Qualified |
134217728 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
16MX8 |
16M |
-40 Cel |
DUAL |
R-PDSO-G54 |
143 MHz |
Not Qualified |
134217728 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
8MX16 |
8M |
-40 Cel |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
134217728 bit |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
|||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
33554432 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX8 |
32M |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G54 |
3 |
133 MHz |
Not Qualified |
268435456 bit |
e6 |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
135 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G54 |
3 |
133 MHz |
Not Qualified |
67108864 bit |
e6 |
260 |
.001 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||
Toshiba |
EDO DRAM |
COMMERCIAL |
24 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
e0 |
.0005 Amp |
60 ns |
|||||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
220 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX16 |
8M |
0 Cel |
TIN BISMUTH |
DUAL |
R-PDSO-G54 |
3 |
166 MHz |
Not Qualified |
134217728 bit |
e6 |
260 |
.002 Amp |
1,2,4,8 |
5 ns |
||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
33554432 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX16 |
32M |
0 Cel |
DUAL |
R-PDSO-G54 |
3 |
133 MHz |
Not Qualified |
536870912 bit |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX16 |
16M |
0 Cel |
DUAL |
R-PDSO-G54 |
1 |
133 MHz |
Not Qualified |
268435456 bit |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||||
|
Samsung |
SYNCHRONOUS DRAM |
INDUSTRIAL |
54 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
16777216 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
16MX16 |
16M |
-40 Cel |
DUAL |
R-PDSO-G54 |
3 |
133 MHz |
Not Qualified |
268435456 bit |
260 |
.002 Amp |
1,2,4,8 |
5.4 ns |
||||||||||||||||||||||
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
165 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.002 Amp |
4,8 |
7 ns |
|||||||||||||||||||||||
Samsung |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
8388608 words |
1,2,4,8,FP |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
e0 |
.002 Amp |
4,8 |
7 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
24 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP24/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G24 |
Not Qualified |
16777216 bit |
.001 Amp |
60 ns |
|||||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
66 MHz |
Not Qualified |
16777216 bit |
.003 Amp |
1,2,4,8 |
12 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
4194304 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
7.5 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
7.5 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
262144 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
70 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
83 MHz |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
1,2,4,8 |
8 ns |
|||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
.001 Amp |
60 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
.001 Amp |
60 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
50 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
40 |
TSOP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
140 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
83 MHz |
Not Qualified |
16777216 bit |
.001 Amp |
1,2,4,8 |
10 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
4194304 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G44 |
66 MHz |
Not Qualified |
16777216 bit |
.001 Amp |
1,2,4,8 |
12 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
105 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
R-PDSO-G40 |
Not Qualified |
4194304 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
50 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
120 mA |
4194304 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
1,2,4,8 |
6 ns |
|||||||||||||||||||||||
Texas Instruments |
SYNCHRONOUS DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
2097152 words |
1,2,4,8 |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
.001 Amp |
1,2,4,8 |
9 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
150 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
.001 Amp |
70 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
60 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
80 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
.001 Amp |
70 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
2097152 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00015 Amp |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
130 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
50 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
60 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.