TSOP DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
DM2223T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2212T1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2233T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2203T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
SM3404T-10I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	DUAL	R-PDSO-G50	100 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	6 ns
DM2202T-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2202T-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2212T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2202T1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2233T-15	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T1-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2223T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		20 ns
DM2233T-12	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2203T-12	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
SM3404T-7.5	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	R-PDSO-G50	133 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	4.6 ns
DM2202T-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2202T1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2233T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		20 ns
SM3404T-6.0I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	DUAL	R-PDSO-G50	166 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	4.5 ns
DM2202T-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2202T1-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2203T-15	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2212T-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2202T1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2213T-12	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
SM3404T-7.5I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	DUAL	R-PDSO-G50	133 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	4.6 ns
SM3404T-6.0	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	R-PDSO-G50	166 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	4.5 ns
DM2202T1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2202T-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2202T1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2223T-12	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
SM3404T-10	Infineon Technologies	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	R-PDSO-G50	100 MHz	Not Qualified	16777216 bit	.002 Amp	1,2,4,8	6 ns
DM2212T-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2202T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2212T1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2223T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2213T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2213T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		20 ns
DM2203T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		20 ns
DM2213T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2233T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns
DM2203T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2213T-15	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		15 ns
DM2212T1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44		Not Qualified	4194304 bit	.001 Amp		12 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.