TSOP DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
K4F660812D-TI450	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		45 ns
K4E640412E-TI50T	Samsung	EDO DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		50 ns
KM48S8030BT-F10Q	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	135 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54	3	100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	7 ns
KM416S4030CT-G8Z	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4F641612B-TC45R0	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50			Not Qualified	67108864 bit	e0		.0005 Amp		45 ns
K4E661612D-TI500	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL	R-PDSO-G50	1		Not Qualified	67108864 bit			.0005 Amp		50 ns
K4F660812E-TI600	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		60 ns
K4F660411D-TC50T	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	16777216 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32			Not Qualified	67108864 bit	e0		.001 Amp		50 ns
K4F640812E-TP45T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	8388608 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0002 Amp		45 ns
KM416S4030AT-G10CI	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	165 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.002 Amp	4,8	7 ns
K4E661612E-TP60T	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL	R-PDSO-G50			Not Qualified	67108864 bit			.0002 Amp		60 ns
K4S640832E-TC1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54	3	100 MHz	Not Qualified	67108864 bit		240	.001 Amp	1,2,4,8	6 ns
K4E151612D-TC450	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G44			Not Qualified	16777216 bit			.0005 Amp		45 ns
K4F660412E-TC60T	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		60 ns
KM44V16104CS-6K	Samsung	EDO DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32			Not Qualified	67108864 bit	e0		.0005 Amp		60 ns
K4S641632C-TC80T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4S640832E-TC1LT	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54	3	100 MHz	Not Qualified	67108864 bit		240	.001 Amp	1,2,4,8	6 ns
KM44S16030CT-FHK	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4S561632H-TC75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.56,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL	R-PDSO-G54	1	133 MHz	Not Qualified	268435456 bit			.002 Amp	1,2,4,8	5.4 ns
K4S511632B-UL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	200 mA	33554432 words	1,2,4,8		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL	R-PDSO-G54	3	133 MHz	Not Qualified	536870912 bit		260	.002 Amp	1,2,4,8	5.4 ns
KM44S16030AT-G10D	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.002 Amp	4,8	7 ns
K4F660812D-TI60T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		60 ns
K4E151611C-TC45T	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G44			Not Qualified	16777216 bit			.001 Amp		45 ns
KM44S4020AT-F10	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		100 MHz	Not Qualified	16777216 bit	e0		.002 Amp	4,8	7.5 ns
K4S161622D-TI80T	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		DUAL	R-PDSO-G50		125 MHz	Not Qualified	16777216 bit			.002 Amp	1,2,4,8	6 ns
KM416S4030AT-G12K	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	135 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		83 MHz	Not Qualified	67108864 bit	e0		.002 Amp	4,8	8 ns
K4E151611D-TC45T	Samsung	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G44			Not Qualified	16777216 bit			.001 Amp		45 ns
K4S510432B-TC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	200 mA	134217728 words	1,2,4,8		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54		133 MHz	Not Qualified	536870912 bit	e0		.002 Amp	1,2,4,8	5.4 ns
KM416S4030BT-GLKZ	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4S641632K-TC60T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54		166 MHz	Not Qualified	67108864 bit			.001 Amp	1,2,4,8	5 ns
KM416S4030BT-F10KZ	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	7 ns
K4F640412E-TP450	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0002 Amp		45 ns
K4F640412E-TI600	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		60 ns
K4S641632A-TC80R0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	200 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0		.002 Amp	4,8	6 ns
K4S640832N-LL75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54		133 MHz	Not Qualified	67108864 bit			.002 Amp	1,2,4,8	5.4 ns
KM44S16021AT-G8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0		.002 Amp	4,8	5.5 ns
KM44V16000BS-6R	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32			Not Qualified	67108864 bit	e0		.0005 Amp		60 ns
K4F660812E-TC600	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		60 ns
K4E661612D-TP60T	Samsung	EDO DRAM	INDUSTRIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	TIN LEAD	DUAL	R-PDSO-G50			Not Qualified	67108864 bit	e0		.0002 Amp		60 ns
K4S641632E-TL70T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		143 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4S641632B-TC1LMZ	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4F660812E-TC50T	Samsung	FAST PAGE DRAM	COMMERCIAL	32	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G32			Not Qualified	67108864 bit			.0005 Amp		50 ns
K4F641612E-TC50T	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50			Not Qualified	67108864 bit	e0		.0005 Amp		50 ns
K4S641636A-TL70	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54		142 MHz	Not Qualified	67108864 bit	e0		.00025 Amp	4,8	5 ns
KM416S4020BT-GHK	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G54	3	100 MHz	Not Qualified	67108864 bit	e0		.001 Amp	1,2,4,8	6 ns
K4F661612E-TC50T	Samsung	FAST PAGE DRAM	COMMERCIAL	50	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50			Not Qualified	67108864 bit	e0		.0005 Amp		50 ns
K4S641632N-LL50T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54		200 MHz	Not Qualified	67108864 bit			.002 Amp	1,2,4,8	4.5 ns
KM416S1021BT-F8	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50		125 MHz	Not Qualified	16777216 bit	e0		.00025 Amp	4,8	5.5 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.