TSSOP DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MCM54100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20					Not Qualified	4194304 bit						.001 Amp			80 ns
MCM5L4100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20					Not Qualified	4194304 bit						.0002 Amp			70 ns
MCM54100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M		DUAL		R-PDSO-G20					Not Qualified	4194304 bit						.001 Amp			80 ns
HYB25DC512160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D128800ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128160AE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		8MX16	8M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D128800AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25DC512800CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D128400AT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400AE-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX4	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.8 ns
HYB25DC512800CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128400AE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX4	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D512800CT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D512800CEL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
HYB25DC256800CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX8	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128800AE-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.8 ns
HYB25D512400CT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.6		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		128MX4	128M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D512400CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		128MX4	128M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25DC256160CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128160AT-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D512800CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128160AE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		8MX16	8M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.7 ns
HYB25D512160CT-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128160AT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128800ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128400ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D512800CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D256161CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3			.005 Amp	2,4,8	22.22 mm	.65 ns
HYB25D128160ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D256161CE-4	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	315 mA	16777216 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3			.006 Amp	2,4,8	22.22 mm	.6 ns
HYB25DC128160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		8MX16	8M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25DC256160CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D512160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D512800CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25DC256160CE-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX16	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D512160CT-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
HYB25D512400CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.6		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		128MX4	128M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.5 ns
HYB25D128400AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800AE-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		16MX8	16M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.75 ns
HYB25D512160CEL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.5 ns
HYB25D128160AE-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		8MX16	8M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	.8 ns
HYB25D128400ATL-8	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	270 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0045 Amp	2,4,8	22.22 mm	.8 ns
HYB25D128160ATL-6	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0055 Amp	2,4,8	22.22 mm	.7 ns
HYB25D128160AT-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D128800ATL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.75 ns
HYB25D512800CEL-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		64MX8	64M	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.5 ns
HYB25DC512160CE-5	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.5 ns
HYB25D128160ATL-7	Infineon Technologies	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	8MX16	8M	TIN LEAD	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.