TSSOP DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
UPD4564323G5-A10-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	200 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	100 MHz	Not Qualified	67108864 bit	e0	.0005 Amp	1,2,4,8	6 ns
UPD424402GSM-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		60 ns
UPD421000GX-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp		100 ns
UPD4217412G5-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0			80 ns
UPD424400GS-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		70 ns
UPD4216412G5M-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0			80 ns
UPD4564323G5-A80-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	230 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	125 MHz	Not Qualified	67108864 bit	e0	.0005 Amp	1,2,4,8	6 ns
UPD424256GXM-10L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.0002 Amp		100 ns
UPD424410GSM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		60 ns
UPD42641GS-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD45D128842G5-C12-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	290 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	16MX8	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G66	100 MHz	Not Qualified	134217728 bit	e0	.025 Amp	2,4,8	1 ns
UPD424100GS-10-9JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD42S4400LGS-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0001 Amp		60 ns
UPD42S4100AGSM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words		YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0002 Amp		60 ns
UPD424101GSM-60	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		60 ns
UPD45D128842G5-C10-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	290 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	16MX8	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G66	125 MHz	Not Qualified	134217728 bit	e0	.025 Amp	2,4,8	.8 ns
UPD424256GXM-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp		100 ns
UPD424400LGS-A70-9JD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0005 Amp		70 ns
UPD4564323G5-A60L-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	240 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	166 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8	5.5 ns
UPD421000GXM-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp		70 ns
UPD42S4400GS-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.00015 Amp		60 ns
UPD424100AGSM-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		50 ns
UPD424101GS-70	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		70 ns
UPD424256GXM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp		60 ns
UPD424400LGS-A60-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0005 Amp		60 ns
UPD424101GS-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD421000GXM-60L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.0002 Amp		60 ns
UPD4564323G5-A60-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	240 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86	166 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8	5.5 ns
UPD424102GS-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD424102GSM-70L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0003 Amp		70 ns
UPD42S4400AGSM-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	1048576 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0002 Amp		70 ns
UPD424400LGS-A70-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0005 Amp		70 ns
UPD4217412G5M-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0			70 ns
UPD421000GXM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/24,.63,20	DRAMs	.5 mm	70 Cel	YES	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	1048576 bit	e0	.001 Amp		60 ns
UPD424410GSM-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
UPD424400GS-10-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD424101GSM-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD424412GSM-70L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0003 Amp		70 ns
UPD424101GSM-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD424400GS-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD424102GS-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD424400GS-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD424412GS-80L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
UPD424400LGS-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0005 Amp		60 ns
UPD45D128442G5-C10-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	290 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	32MX4	32M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G66	125 MHz	Not Qualified	134217728 bit	e0	.025 Amp	2,4,8	.8 ns
UPD4217412G5M-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0			80 ns
UPD424402GSM-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	1048576 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp		70 ns
UPD424102GS-60L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.0003 Amp		60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.