VBGA DRAM 291

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
S27KS0643GABHI023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KS0643GABHA023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KS0642GABHA030	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00022 Amp	8 mm	35 ns
S27KL0642DPBHA030	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	36 ns
S70KL1283DPBHB023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
S27KS0642GABHB033	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00033 Amp	8 mm	35 ns
S27KS0643GABHA020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S70KS1283GABHA023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		134217728 bit	1.7 V	SELF REFRESH		.0005 Amp	8 mm	35 ns
S70KL1282DPBHB020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S27KL0643DPBHA023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KL0642DPBHA033	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	36 ns
S27KL0643GABHI020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KS0642GABHB023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V			.00033 Amp	8 mm
S27KL0643GABHI023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KS0642GABHA023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	25 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V			.00022 Amp	8 mm
S27KL0642DPBHB033	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	HYPER BUS	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	35 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24		3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	36 ns
S70KL1282DPBHV033	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24		3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm	35 ns
S27KL0642GABHA020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V			.00025 Amp	8 mm
S70KL1282GABHV023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel		3-STATE	16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V			.00075 Amp	8 mm
S27KS0643GABHB020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V	1 mm	200 MHz	6 mm		67108864 bit	1.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S27KL0643DPBHI023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S70KL1283GABHV023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
S27KL0643DPBHV023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S27KL0643GABHV023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S27KL0643DPBHI020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm	35 ns
S27KL0642GABHI030	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00025 Amp	8 mm
S70KL1283DPBHI023	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.0005 Amp	8 mm	35 ns
S27KL0643DPBHV020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	28 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S70KL1283DPBHI020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	56 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	166 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.0005 Amp	8 mm	35 ns
S27KL0643GABHV020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			8MX8	8M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V	SELF REFRESH		.00036 Amp	8 mm	35 ns
S70KL1283GABHV020	Infineon Technologies	HYPERRAM	24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	105 Cel			16MX8	16M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		134217728 bit	2.7 V	SELF REFRESH		.00075 Amp	8 mm	35 ns
K4R441869B-NCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	53.3 ns
K4R441869B-MCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	53.3 ns
KM416RD8AC-RK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
KM418RD8AD-RG60	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	53.3 ns
KM418RD8AD-SG60	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		262144 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0		12 mm	53.3 ns
K4R441869A-NCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R441869A-MCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R271669B-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R271669A-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R441869A-NCG6	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	53.3 ns
K4R271669B-MCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
KM416RD8AD-SK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		262144 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0		12 mm	45 ns
KM416RD8AC-RK70	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R271669A-NCK7	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
K4R441869A-MCK8	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns
KM416RD8AC-SK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		262144 words	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0		12 mm	45 ns
KM418RD8AD-RK80	Samsung	RAMBUS DRAM	62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62		2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0		12 mm	45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.