VBGA DRAM 291

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM418RD8AC-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
KM418RD8AD-SK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
K4R441869B-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R441869B-NCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM418RD8AD-RK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM418RD8AC-RK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM418RD8AD-SK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
KM416RD8AC-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
KM416RD8AC-SK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
KM418RD8AC-SK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
K4R271669B-MCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
KM416RD8AD-RK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669A-NCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R441869B-NCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4R441869B-MCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
KM416RD8AC-RK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM418RD8AD-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
KM418RD8AD-SG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX18	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	4718592 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	53.3 ns
K4R441869A-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R441869A-MCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669B-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669A-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R441869A-NCG6	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
K4R271669B-MCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM416RD8AD-SK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
KM416RD8AC-RK70	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R271669A-NCK7	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	711 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
K4R441869A-MCK8	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM416RD8AC-SK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		262144 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm			3-STATE	256KX16	256K		Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	4194304 bit	2.37 V	AUTO/SELF REFRESH	e0			12 mm	45 ns
KM418RD8AD-RK80	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX18	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	800 MHz	10.2 mm	Not Qualified	150994944 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	45 ns
KM416RD8AD-RG60	Samsung	RAMBUS DRAM		62	VBGA	16384	RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA62,12X9,40/32	DRAMs	.8 mm		YES	3-STATE	8MX16	8M		TIN LEAD	BOTTOM	1	R-PBGA-B62	2.63 V	1 mm	600 MHz	10.2 mm	Not Qualified	134217728 bit	2.37 V	SELF CONTAINED REFRESH	e0			12 mm	53.3 ns
MT49H16M36BM-33E	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	95 Cel			16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H16M36BM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H8M32BM-5	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	598 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	8MX32	8M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1	260		18.5 mm
MT49H64M9BM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		9	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			64MX9	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H8M32FM-33	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	807 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e0			18.5 mm
MT49H16M36BM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H32M18BM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		18	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			32MX18	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H8M32FM-5	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	598 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	8MX32	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e0			18.5 mm
MT49H64M9FM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	819 mA	67108864 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	64MX9	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0		.048 Amp	18.5 mm	.2 ns
MT49H16M36BM-33EIT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel			16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H32M18FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	597 mA	33554432 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0		.048 Amp	18.5 mm	.25 ns
MT49H8M32FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	807 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	8MX32	8M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e0			18.5 mm
MT49H16M36BM-25E	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	95 Cel			16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1			18.5 mm
MT49H16M16BM-33	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	713 mA	16777216 words	2,4		COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	300 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1	260		18.5 mm
MT49H16M36FM-25Z	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	914 mA	16777216 words	2,4,8	YES	COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	16MX36	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e0		.048 Amp	18.5 mm	.2 ns
MT49H8M32BM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	598 mA	8388608 words	2,4		COMMON	1.8	1.8,2.5	32	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel		3-STATE	8MX32	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.95 V	.93 mm	200 MHz	11 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1			18.5 mm
MT49H32M9BM-2.5	Micron Technology	DDR DRAM	OTHER	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, VERY THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel		3-STATE	32MX9	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	260		18.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.