UNSPECIFIED DRAM 331

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Standby Current	Maximum Access Time
KMCJ5361000-7	Samsung	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		18		70 Cel	3-STATE	1MX36	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	37748736 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMCV5324000-7	Samsung	DRAM CARD	COMMERCIAL	88		4096	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		4194304 words			3.3		32	MICROELECTRONIC ASSEMBLY		16		70 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		3.6 V		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
KMCJ5324100-6	Samsung	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY		16		70 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	134217728 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
KMCJ532512-8	Samsung	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		524288 words			5		32	MICROELECTRONIC ASSEMBLY		16		70 Cel	3-STATE	512KX32	512K	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	16777216 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
KMCV5324000-8	Samsung	DRAM CARD	COMMERCIAL	88		4096	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	MOS	UNSPECIFIED	ASYNCHRONOUS		4194304 words			3.3		32	MICROELECTRONIC ASSEMBLY		16		70 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		3.6 V		Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT8D88C432V-8	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT4C16257D32AWC2-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT8D88C432-6S	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	960 mA	4194304 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	134217728 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	.0016 Amp	60 ns
MT4C16257D32AWC1	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT4C1004JD22AWX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT16D88C832V-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	968 mA	8388608 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	8MX32	8M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
MT8D88C132VH-8S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	480 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.004 Amp	80 ns
MT12D88C436-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		4194304 words			5		36	MICROELECTRONIC ASSEMBLY		18		55 Cel		4MX36	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	150994944 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH		60 ns
MT16D88C232-8	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	736 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0032 Amp	80 ns
MT4LC1M16E5D24AWC2-7	Micron Technology	EDO DRAM		57	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			3.3		16	UNCASED CHIP					3-STATE	1MX16	1M		UPPER	1	X-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT8D88C432V-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	960 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	60 ns
MT4C8512D18ADC1-8	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words			5		8	UNCASED CHIP				70 Cel	3-STATE	512KX8	512K	0 Cel	UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT16D88C232VH-6	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	648 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	60 ns
MT8D88C132VH-7S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	560 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.004 Amp	70 ns
MT4C4M4B1D21AWC2-7	Micron Technology	FAST PAGE DRAM	OTHER	45	DIE	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		4	UNCASED CHIP				85 Cel	3-STATE	4MX4	4M	0 Cel	UPPER	1	X-XUUC-N45		5.5 V		Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT16D88C232V-10	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words			3.3		32	MICROELECTRONIC ASSEMBLY		16		55 Cel		2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		3.45 V		Not Qualified	67108864 bit	3.15 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH		100 ns
MT16D88C832VH-6S	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	968 mA	8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	8MX32	8M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.008 Amp	60 ns
MT16D88C232V-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	568 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	70 ns
MT8D88C132H-6	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	880 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0016 Amp	60 ns
MT4C16257D18ADC2-6	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT16D88C232V-6S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	648 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.008 Amp	60 ns
MT4C1004JD22AWX1-7	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT8D88C132V-7S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	560 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.004 Amp	70 ns
MT8D88C432V-7S	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	880 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.004 Amp	70 ns
MT8D88C432H-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	960 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	134217728 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0016 Amp	60 ns
MT16D88C832H-8	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	816 mA	8388608 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	8MX32	8M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	268435456 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0032 Amp	80 ns
MT12D88C136-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		18		55 Cel	3-STATE	1MX36	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	37748736 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT24D88C51236-8	Micron Technology	DRAM CARD	COMMERCIAL	88		512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		524288 words			5		36	MICROELECTRONIC ASSEMBLY		18		55 Cel	3-STATE	512KX36	512K	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	18874368 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT12D88C25636-6	Micron Technology	DRAM CARD	COMMERCIAL	88		512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		262144 words			5		36	MICROELECTRONIC ASSEMBLY		18		55 Cel	3-STATE	256KX36	256K	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	9437184 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		60 ns
MT16D88C232VH-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	568 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.008 Amp	70 ns
MT4C1004JD22AWC1	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	UNCASED CHIP					3-STATE	4MX1	4M		UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT8D88C132VH-8	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	480 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.004 Amp	80 ns
MT16D88C232-8S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	736 mA	2097152 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	.0032 Amp	80 ns
MT8D88C432H-7	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	880 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	4MX32	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	134217728 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0016 Amp	70 ns
MT4C16257D32AWC2-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT24D88C51236-7	Micron Technology	DRAM CARD	COMMERCIAL	88		512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		524288 words			5		36	MICROELECTRONIC ASSEMBLY		18		55 Cel	3-STATE	512KX36	512K	0 Cel	UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	18874368 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		70 ns
MT8D88C132H-8	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	720 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	33554432 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	.0016 Amp	80 ns
MT8D88C132-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	800 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0016 Amp	70 ns
MT4C16257D32AWC2-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel	UPPER	1	X-XUUC-N51		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT16D88C232-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	816 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	2MX32	2M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0032 Amp	70 ns
MT4LC4M4E8D24AWC1	Micron Technology	EDO DRAM		57	DIE	2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words			3.3		4	UNCASED CHIP					3-STATE	4MX4	4M		UPPER	1	X-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		80 ns
MT8D88C132H-7	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	800 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	1MX32	1M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	50.927 mm	Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	.0016 Amp	70 ns
MT16D88C832V-8S	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs	55 Cel	3-STATE	8MX32	8M	0 Cel	UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	.008 Amp	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.