UNSPECIFIED DRAM 331

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
MT24D88C51240-8	Micron Technology	DRAM CARD	COMMERCIAL	88		512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS		524288 words			5		40	MICROELECTRONIC ASSEMBLY		20			55 Cel	3-STATE	512KX40	512K	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	20971520 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
MT4C16257D18ADC1	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP					70 Cel	3-STATE	256KX16	256K	0 Cel		UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
5962-9688902Q9A	Micron Technology	FAST PAGE DRAM	COMMERCIAL	26	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS	100 mA	4194304 words	NO	SEPARATE	5	5	1	UNCASED CHIP	DIE OR CHIP		DRAMs		70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	UPPER	1	X-XUUC-N26		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	70 ns
MT16D88C232-6	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	896 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs		55 Cel	3-STATE	2MX32	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0032 Amp	60 ns
MT16D88C232V-7S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	568 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs		55 Cel	3-STATE	2MX32	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	85.8012 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.008 Amp	70 ns
MT24D88C240-8	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS		2097152 words			5		40	MICROELECTRONIC ASSEMBLY		20			55 Cel	3-STATE	2MX40	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	83886080 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
MT8D88C232H-6S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	2MX32	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V		Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					60 ns
MT4C4001JD22AWX1-8	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		4	UNCASED CHIP						3-STATE	1MX4	1M			UPPER	1	X-XUUC-N30				Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
MT8D88C432-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	960 mA	4194304 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88		DRAMs		55 Cel	3-STATE	4MX32	4M	0 Cel		UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm	Not Qualified	134217728 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH				.0016 Amp	60 ns
MT16D88C832VH-7S	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	888 mA	8388608 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs		55 Cel	3-STATE	8MX32	8M	0 Cel		UNSPECIFIED	1	X-XXMA-X88	1	3.6 V	50.927 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.008 Amp	70 ns
MT4C16257D18AWC2-6	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		262144 words			5		16	UNCASED CHIP					70 Cel	3-STATE	256KX16	256K	0 Cel		UPPER	1	X-XUUC-N65		5.5 V		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
MT4LC1M16C3D24AWC2-8	Micron Technology	EDO DRAM		57	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			3.3		16	UNCASED CHIP						3-STATE	1MX16	1M			UPPER	1	X-XUUC-N57				Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
MT44K32M36PKM-125	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K32M36RCT-125EIT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT4067EC-10XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				100 ns
MT4067EC-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				150 ns
MT44K32M36RCT-125E	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1	30	260
MT44K64M18RCT-125	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT4067EC-12/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				120 ns
MT4067EC-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				120 ns
MT4067EC-10M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				100 ns
MT44K64M18PKM-125IT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT4067EC-10/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				100 ns
MT4067EC-12XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				120 ns
MT44K32M36PKM-125E	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K32M36PKM-125IT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT4067EC-15XT	Micron Technology	PAGE MODE DRAM	MILITARY	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				150 ns
MT44K32M36RCT-125IT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT44K64M18PKM-125E	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K64M18PKM-125	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K64M18PKM-125EIT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K64M18RCT-125EIT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT4067EC-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				80 ns
MT4067EC-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				200 ns
MT44K32M36RCT-125	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT4067EC-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				100 ns
MT4067EC-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				150 ns
MT4067EC-20/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				200 ns
MT44K32M36PKM-125EIT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.35		36	GRID ARRAY							32MX36	32M			BOTTOM	1	X-PBGA-B168					1207959552 bit
MT44K64M18RCT-125E	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT44K64M18RCT-125IT	Micron Technology	DDR DRAM		168	BGA		UNSPECIFIED	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words			1.35		18	GRID ARRAY							64MX18	64M		TIN SILVER COPPER	BOTTOM	1	X-PBGA-B168					1207959552 bit			e1
MT4067EC-15/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				150 ns
MT4067EC-12M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	ASYNCHRONOUS	55 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	X-CQCC-N18		5.5 V		Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.