Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
95 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
60 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
140 mA |
262144 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J40 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
26.035 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
100 ns |
|||||||||||||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
44 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
190 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
20.95 mm |
60 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
70 ns |
|||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
50 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
80 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
945 mA |
4194304 words |
YES |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
4MX9 |
4M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.5 V |
20.447 mm |
Not Qualified |
37748736 bit |
4.5 V |
AUTO/SELF REFRESH |
.009 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SOJ |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
J BEND |
ASYNCHRONOUS |
75 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX1 |
4M |
-55 Cel |
DUAL |
1 |
R-CDSO-J20 |
5.5 V |
3.56 mm |
8.382 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.145 mm |
100 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
LSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
90 mA |
4194304 words |
YES |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE, LOW PROFILE |
TSSOP20/26,.36 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
5.5 V |
1.27 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
17.14 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
800 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH |
.01 Amp |
80 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
ZIP |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
ASYNCHRONOUS |
70 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
ZIG-ZAG |
1 |
R-XZIP-T20 |
5.5 V |
11.56 mm |
2.92 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
26.67 mm |
120 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
285 mA |
1048576 words |
COMMON |
5 |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
SIM30 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
1MX9 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.25 V |
20.4978 mm |
Not Qualified |
9437184 bit |
4.75 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.003 Amp |
60 ns |
||||||||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
600 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
16 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
.004 Amp |
70 ns |
||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
344 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
17.78 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
80 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
50 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0003 Amp |
17.145 mm |
80 ns |
|||||||||||||||
Texas Instruments |
NIBBLE MODE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NIBBLE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
65 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.4 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
8.89 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
100 ns |
||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1048576 words |
YES |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
27.38 mm |
60 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
360 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
50 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1600 mA |
2097152 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
75497472 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.02 Amp |
80 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
140 mA |
262144 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ40,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J40 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.00035 Amp |
26.035 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
16 |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
30 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
9 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1MX9 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N30 |
5.25 V |
Not Qualified |
9437184 bit |
4.75 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
60 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
170 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44/50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
16777216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
50 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
900 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.527 mm |
Not Qualified |
37748736 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.01 Amp |
70 ns |
||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
360 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.004 Amp |
60 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4194304 words |
YES |
3.3 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
3.6 V |
3.76 mm |
7.57 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
17.145 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1048576 words |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1MX40 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
Not Qualified |
41943040 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
70 ns |
||||||||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DIP |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
SYNCHRONOUS |
85 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
IN-LINE |
ZIP20,.1 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-CDIP-T20 |
5.5 V |
10.92 mm |
2.92 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
26.67 mm |
80 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
262144 words |
YES |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-J40 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
26.035 mm |
100 ns |
||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
170 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0005 Amp |
27.305 mm |
80 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
180 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
27.305 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
105 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
0 Cel |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
40 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
120 mA |
262144 words |
YES |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
DUAL |
1 |
R-PDSO-G40 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.00035 Amp |
18.41 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
110 mA |
524288 words |
NO |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
18.41 mm |
70 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE WITH EDO |
NO |
1 |
MOS |
NO LEAD |
ASYNCHRONOUS |
1440 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
67108864 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.016 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
DFP |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
YES |
1 |
CMOS |
MIL-STD-883 |
FLAT |
ASYNCHRONOUS |
80 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
FLATPACK |
FL20,.5 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
1MX4 |
1M |
-55 Cel |
DUAL |
1 |
R-XDFP-F20 |
5.5 V |
2.54 mm |
12.45 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.78 mm |
100 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
20 |
TSOP2-R |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
1048576 words |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-G20 |
3.6 V |
1.2 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
17.14 mm |
70 ns |
|||||||||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
28 |
TSOP2 |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
90 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP28,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
18.41 mm |
100 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
190 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0002 Amp |
27.305 mm |
60 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
COMMERCIAL |
24 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ24/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J24 |
3.6 V |
3.76 mm |
7.62 mm |
Not Qualified |
4194304 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.0003 Amp |
17.145 mm |
60 ns |
|||||||||||||||
Texas Instruments |
EDO DRAM |
COMMERCIAL |
42 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
MOS |
J BEND |
ASYNCHRONOUS |
150 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ42,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
1 |
R-PDSO-J42 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.001 Amp |
27.305 mm |
70 ns |
|||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
160 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
1 |
R-XSMA-N72 |
5.5 V |
25.4 mm |
Not Qualified |
33554432 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
.002 Amp |
70 ns |
|||||||||||||||||||
Texas Instruments |
FAST PAGE DRAM |
MILITARY |
20 |
SON |
1024 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
FAST PAGE |
YES |
1 |
CMOS |
38535Q/M;38534H;883B |
NO LEAD |
ASYNCHRONOUS |
65 mA |
4194304 words |
NO |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOLCC20/26,.4 |
DRAMs |
1.27 mm |
125 Cel |
3-STATE |
4MX1 |
4M |
-55 Cel |
DUAL |
1 |
R-CDSO-N20 |
5.5 V |
2.337 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
17.78 mm |
120 ns |
||||||||||||||
Texas Instruments |
FAST PAGE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
850 mA |
1048576 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.5778 mm |
Not Qualified |
37748736 bit |
.01 Amp |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.