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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS44800S-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	110 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	18.41 mm	70 ns
TM124EAD9C-10	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	195 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.4978 mm		Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.003 Amp		100 ns
TMS44400-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	100 ns
TM248NBK36C-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1600 mA	2097152 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm		Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.02 Amp		80 ns
TMS44165-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	105 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	80 ns
SMJ44400-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	DUAL	1	R-CDIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	100 ns
TM124EAD9B-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	225 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.4978 mm		Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.003 Amp		80 ns
TM124BBK32-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	760 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.25 V	25.5778 mm		Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp		60 ns
5962-9084701MUA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	DIP20,.4		DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	DUAL	1	R-XDIP-T20	5.5 V	4.44 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp	25.525 mm	120 ns
TMS44460-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	80 ns
TM124GU8A-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	190 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.25 V	16.637 mm		Not Qualified	8388608 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.002 Amp		60 ns
TMS44400-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		1MX4	1M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				17.14 mm	80 ns
TM124MBJ36F-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					70 ns
TMS44100P-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				17.14 mm	70 ns
TM248NBK36V-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	780 mA	2097152 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm		Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp		60 ns
TMS44409-60DGA	Texas Instruments	EDO DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	105 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	60 ns
TM4100EAD9-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	YES	COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm		Not Qualified	37748736 bit	4.5 V	AUTO/SELF REFRESH			.009 Amp		80 ns
TM248GBK32U-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		2097152 words	YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					60 ns
TMS44460P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	105 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	17.145 mm	60 ns
TMS44101-70DM	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	4194304 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS44400-60DJR	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		95 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.001 Amp		60 ns
TMS46400P-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	YES		3.3		4	IN-LINE				1.27 mm	70 Cel		1MX4	1M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					80 ns
TMS44100P-60DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH				17.14 mm	60 ns
TM124BBK32-80L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					80 ns
TMS428169-80DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	170 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	27.305 mm	80 ns
TMS428160AP-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		140 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		70 ns
TMS418160-60DZR	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	190 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	60 ns
TMS44400-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	60 ns
TMS428160P-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	170 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	20.95 mm	80 ns
TM4100EBD9-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	675 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	23.114 mm		Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.009 Amp		80 ns
TM4100GAD8-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	720 mA	4194304 words	YES	COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.447 mm		Not Qualified	33554432 bit	4.5 V	AUTO/SELF REFRESH			.008 Amp		70 ns
TM124FBK32-80	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	640 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp		80 ns
TMS418169A-60DZR	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		J BEND	ASYNCHRONOUS	160 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	27.305 mm	60 ns
TMS418160-70RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				27.38 mm	70 ns
MCM54100AZ70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit					.001 Amp		70 ns
MCM5L4100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.0002 Amp		70 ns
MCM54100AT60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.001 Amp		60 ns
MCM5L4100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.0002 Amp		80 ns
MCM54100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.001 Amp		60 ns
MCM54100AN60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.001 Amp		60 ns
MCM5L4100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.0002 Amp		70 ns
MCM54100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.001 Amp		70 ns
MCM5L4100AN80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.0002 Amp		80 ns
MCM5L4100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.0002 Amp		60 ns
MCM54100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.001 Amp		70 ns
MCM54100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.001 Amp		70 ns
MCM54100AN80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20				Not Qualified	4194304 bit					.001 Amp		80 ns
MCM5L4100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36		DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-G20				Not Qualified	4194304 bit					.0002 Amp		80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.