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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
HYM94500S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	4194304 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX9	4M	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V	20.32 mm		Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; SEPARATE CAS FOR NINTH BIT		.009 Amp		70 ns
HYM362120GS-80	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1024 mA	2097152 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	31.75 mm		Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		.024 Amp		80 ns
HYB514100AZ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
HYM361140S-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1240 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		31.75 mm		Not Qualified	37748736 bit				.012 Amp		60 ns
HYB514100BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	60 ns
HYM321120S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BYTE ACCESS; PRESENCE DETECT PINS		.008 Amp		70 ns
HYB514400BJ-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20				Not Qualified	4194304 bit			e0	.001 Amp		70 ns
HYB514100BTL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH	e0	.0002 Amp	17.14 mm	60 ns
HYB514100BT-70	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.14 mm	70 ns
HYB514100BJL-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	17.27 mm	60 ns
HYM322005S-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	20.32 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp		50 ns
HYM322160GS-60	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.016 Amp		60 ns
HYB514405BJ-60	Infineon Technologies	EDO DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	60 ns
HYM321160GS-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	800 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm		Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.008 Amp		70 ns
HYB514405BJL-70	Infineon Technologies	EDO DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	17.27 mm	70 ns
HYB514400BJ-50	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.75 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	17.27 mm	50 ns
HYM322005GS-50	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	400 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	20.32 mm		Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp		50 ns
HYM362120S-70	Infineon Technologies	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1144 mA	2097152 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	31.75 mm		Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BYTE ACCESS; PRESENCE DETECT PINS		.024 Amp		70 ns
HYB514800BJ-60	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4194304 bit			e0	.001 Amp		60 ns
HYB514400BTL-80	Infineon Technologies	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; TEST MODE	e0	.0002 Amp	17.14 mm	80 ns
DM2M32SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit				.016 Amp		12 ns
DM2202J1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2M36SJ-20	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	2097152 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		20 ns
DM4M32SJ-15L	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7520 mA	4194304 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		SINGLE		R-PSMA-N72		35.56 mm		Not Qualified	134217728 bit				.036 Amp		15 ns
DM512K32ST6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit				.004 Amp		15 ns
DM512K32ST-12I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		900 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit				.004 Amp		12 ns
DM1M36SJ-15	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	1048576 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit				.009 Amp		15 ns
DM2223T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2M36SJ7-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	2097152 words	YES	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		15 ns
DM2M32SJ6-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit				.016 Amp		15 ns
DM2212T1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2233T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM1M32SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit				.008 Amp		15 ns
DM2202J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		20 ns
DM512K36ST6-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		900 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit				.005 Amp		15 ns
DM2203T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2M36SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		12 ns
DM1M32SJ7-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1800 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit				.008 Amp		12 ns
DM2202T-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202T-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM1M36SJ-20	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	1048576 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit				.009 Amp		20 ns
DM2202T1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2233T-15	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.