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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Standby Current	Length	Maximum Access Time
DM2M36SJ6-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit		.018 Amp		12 ns
DM1M32SJ6-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1800 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		12 ns
DM2212J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		20 ns
DM2M32SJ-20	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit		.016 Amp		20 ns
DM1M36SJ7-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	1048576 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit		.009 Amp		12 ns
DM2202J-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		12 ns
DM2M36SJ7-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	2097152 words	YES	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit		.018 Amp		12 ns
DM2M36SJ-15	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit		.018 Amp		15 ns
DM2M32SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit		.016 Amp		15 ns
DM2202T1-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		15 ns
DM1M36SJ6-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	1048576 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit		.009 Amp		12 ns
DM1M32SJ6-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	1048576 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		15 ns
DM2212J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		15 ns
DM512K36ST6-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1125 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit		.005 Amp		12 ns
DM2212T-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM1M36SJ7-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2025 mA	1048576 words	YES	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit		.009 Amp		12 ns
DM1M32SJ7-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		15 ns
DM2202T-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		15 ns
DM2202J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		15 ns
DM2202T1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		15 ns
DM512K36ST-12	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1125 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit		.005 Amp		12 ns
DM2212T1-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM2M32SJ7-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit		.016 Amp		15 ns
DM512K36ST6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1125 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit		.005 Amp		12 ns
DM512K36ST-15	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		900 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit		.005 Amp		15 ns
DM2202J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		12 ns
DM2223T-12	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM2212T-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		15 ns
DM2M32SJ7-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	SYNCHRONOUS	1440 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	R-PSMA-N72	3 V	24.257 mm	24.13 mm	Not Qualified	67108864 bit	3.6 V	.016 Amp	107.95 mm	12 ns
DM2M36SJ6-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1620 mA	2097152 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit		.018 Amp		15 ns
DM1M32SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1800 mA	1048576 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		12 ns
DM2202T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM1M32SJ7-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1800 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		12 ns
DM1M36SJ7-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1620 mA	1048576 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit		.009 Amp		15 ns
DM1M32SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		15 ns
DM2212T1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM512K32ST-12	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		900 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit		.004 Amp		12 ns
DM2M32SJ7-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	2097152 words	NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit		.016 Amp		12 ns
DM2223T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		15 ns
DM2212J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		15 ns
DM2M32SJ6-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1440 mA	2097152 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit		.016 Amp		12 ns
DM2212J-12	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		12 ns
DM1M32SJ6-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		1800 mA	1048576 words	YES	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit		.008 Amp		12 ns
DM2213T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		12 ns
DM2213T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	R-PDSO-G44				Not Qualified	4194304 bit		.001 Amp		20 ns
DM2202J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL	R-PDSO-J28				Not Qualified	4194304 bit		.001 Amp		12 ns
DM512K36ST6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		900 mA	524288 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel	SINGLE	R-PSMA-N72		24.257 mm		Not Qualified	18874368 bit		.005 Amp		15 ns
DM512K64DT6-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD		2240 mA	524288 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	512KX64	512K	0 Cel	DUAL	R-PDMA-N168		38.1 mm		Not Qualified	33554432 bit		.01 Amp		12 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.