1024 DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DM2203T-20	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		20 ns
DM2M36SJ6-12L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	YES	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		12 ns
DM2212J-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2200J-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2213T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2202J-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM512K64DT6-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1790 mA	524288 words		COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	512KX64	512K	0 Cel		DUAL		R-PDMA-N168		38.1 mm		Not Qualified	33554432 bit				.01 Amp		15 ns
DM512K32ST-15I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit				.004 Amp		15 ns
DM1M32SJ-20	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit				.008 Amp		20 ns
DM1M36SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	1048576 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	37748736 bit				.009 Amp		15 ns
DM2212J1-15	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		15 ns
DM512K32ST6-15	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit				.004 Amp		15 ns
DM2M36SJ6-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	2097152 words	YES	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		15 ns
DM2233T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2203T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2M36SJ7-12	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		12 ns
DM2M32SJ7-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	67108864 bit				.016 Amp		15 ns
DM2213T-15	Infineon Technologies	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM2212J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2202J1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2200J-20	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		20 ns
DM2212T1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		12 ns
DM2212T-15L	Infineon Technologies	CACHE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words	YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-G44				Not Qualified	4194304 bit				.001 Amp		15 ns
DM512K32ST-15	Infineon Technologies	CACHE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words		COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	16777216 bit				.004 Amp		15 ns
DM2M36SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words	NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	75497472 bit				.018 Amp		12 ns
DM2212J1-12L	Infineon Technologies	CACHE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL		R-PDSO-J28				Not Qualified	4194304 bit				.001 Amp		12 ns
DM1M32SJ7-15L	Infineon Technologies	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	1048576 words	YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE		R-PSMA-N72		24.257 mm		Not Qualified	33554432 bit				.008 Amp		15 ns
TC51V18165CJ-60	Toshiba	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			3.3		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			27.31 mm	60 ns
TC514900AJLL-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words	YES		5		9	SMALL OUTLINE				1.27 mm	70 Cel		512KX9	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.7 mm	10.16 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0		18.42 mm	70 ns
THM322020ASG-80	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				80 ns
THM362020AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				60 ns
TC514800AJ-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4194304 bit			e0	.001 Amp		100 ns
TC514100ASJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	7.7 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0		17.15 mm	80 ns
TC51V18165BFTS-70	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		145 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44				Not Qualified	16777216 bit			e0	.0002 Amp		70 ns
TC514101Z-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
TC5118160CJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.7 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			27.31 mm	60 ns
TC5118165CFT-60	Toshiba	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			20.95 mm	60 ns
THM3610B0ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		330 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE		R-PSMA-N72		17.78 mm		Not Qualified	37748736 bit				.002 Amp		70 ns
TC514101AJ-80	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.75 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		17.15 mm	80 ns
TC514101AP-60	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	4.4 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		22 mm	60 ns
TC514800AZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	524288 words	NO	COMMON	5	5	8	IN-LINE	ZIP28,.1		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	4194304 bit			e0	.0003 Amp		100 ns
THM362040AS-60	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel		2MX36	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	75497472 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				60 ns
TC5118160AFT-60	Toshiba	FAST PAGE DRAM		44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE				.8 mm		3-STATE	1MX16	1M		TIN LEAD	DUAL	1	R-PDSO-G44		1.2 mm	10.16 mm	Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		20.95 mm	60 ns
THM322020ASG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words			5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				70 ns
TC514402Z-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		4	IN-LINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		25.8 mm	80 ns
TC514900AJL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		75 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	4718592 bit			e0	.0003 Amp		100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.