Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
CACHE DRAM |
INDUSTRIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
INDUSTRIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1125 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
18874368 bit |
.005 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
7520 mA |
4194304 words |
YES |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
35.56 mm |
Not Qualified |
134217728 bit |
.036 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
67108864 bit |
.016 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2025 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
20 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
524288 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX32 |
512K |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
16777216 bit |
.004 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
2097152 words |
YES |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
67108864 bit |
.016 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
180 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
75497472 bit |
.018 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
INDUSTRIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
20 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
75497472 bit |
.018 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2465 mA |
524288 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX72 |
512K |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
37748736 bit |
.011 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
7520 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
35.56 mm |
Not Qualified |
134217728 bit |
.036 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
524288 words |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX36 |
512K |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
18874368 bit |
.005 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
INDUSTRIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
33554432 bit |
.008 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
7520 mA |
4194304 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX32 |
4M |
0 Cel |
SINGLE |
R-PSMA-N72 |
35.56 mm |
Not Qualified |
134217728 bit |
.036 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX32 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
33554432 bit |
.008 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1970 mA |
524288 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX72 |
512K |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
37748736 bit |
.011 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
225 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2025 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
2MX32 |
2M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
67108864 bit |
.016 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2025 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
28 |
SOJ |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
180 mA |
1048576 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J28 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
524288 words |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX32 |
512K |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
16777216 bit |
.004 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
180 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
1048576 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
2097152 words |
NO |
COMMON |
3.3 |
3.3 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
75497472 bit |
.018 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2465 mA |
524288 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX72 |
512K |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
37748736 bit |
.011 Amp |
12 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
1048576 words |
YES |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1970 mA |
524288 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX72 |
512K |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
37748736 bit |
.011 Amp |
15 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1440 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
2MX32 |
2M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
67108864 bit |
.016 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
INDUSTRIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX32 |
1M |
-40 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
33554432 bit |
.008 Amp |
12 ns |
||||||||||||||||||||||||||
Infineon Technologies |
CACHE DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
2097152 words |
NO |
COMMON |
5 |
5 |
32 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
2MX32 |
2M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
67108864 bit |
.016 Amp |
15 ns |
||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
44 |
TSOP |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
225 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.36,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
DUAL |
R-PDSO-G44 |
Not Qualified |
4194304 bit |
.001 Amp |
12 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
EDO DRAM MODULE |
COMMERCIAL |
72 |
SIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
36 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX36 |
1M |
0 Cel |
SINGLE |
R-PSMA-N72 |
24.257 mm |
Not Qualified |
37748736 bit |
.009 Amp |
15 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.