1024 DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

THM361070ASG-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

36

MICROELECTRONIC ASSEMBLY

70 Cel

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

THM84000S-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

MOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

Not Qualified

33554432 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

80 ns

TC514800AFTL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

75 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0003 Amp

100 ns

THM3210B5BS-60

Toshiba

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

360 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

17.78 mm

Not Qualified

33554432 bit

.002 Amp

60 ns

THM3620C0ASG-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

THM3610B0AS-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

TC514400AJL-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

70 ns

TC514800AZ-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

524288 words

5

8

IN-LINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T28

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

36.2 mm

70 ns

TC514100AJL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

TC5118160BFT-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

155 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.001 Amp

70 ns

TC514900AZL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

75 mA

524288 words

NO

COMMON

5

5

9

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4718592 bit

e0

.0003 Amp

100 ns

THM3620C0AS-70

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

304 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

R-PSMA-N72

17.78 mm

Not Qualified

75497472 bit

.004 Amp

70 ns

TC514402AJ-10

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

TC514400APL-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

4

IN-LINE

2.54 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.4 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

24.6 mm

100 ns

THM361070AS-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

36

MICROELECTRONIC ASSEMBLY

70 Cel

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

37748736 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

THM402040SG-10

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

MOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

40

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

2MX40

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

83886080 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

100 ns

TC514170BJ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

55 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

THM3620C0AS-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

THM322020AS-60

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

67108864 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

60 ns

TC514102ASJ-80

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

80 ns

TC514402AP-10

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

20

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

4

IN-LINE

2.54 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.4 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

24.6 mm

100 ns

TC514900AFT-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

75 mA

524288 words

NO

COMMON

5

5

9

SMALL OUTLINE

SO28(UNSPEC)

DRAMs

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4718592 bit

e0

.001 Amp

100 ns

TC514410AJ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

TC514101AZ-70

Toshiba

NIBBLE MODE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.8 mm

70 ns

TC514800AJL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH

e0

18.42 mm

80 ns

THM362040AS-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

TC514410AP-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

5

4

IN-LINE

2.54 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.4 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

24.6 mm

100 ns

THM3210B0ASG-70

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

280 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

17.78 mm

Not Qualified

33554432 bit

.002 Amp

70 ns

TC514402ASJ-80

Toshiba

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

STATIC COLUMN

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

80 ns

TC514100AP-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

18

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

2.54 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T18

5.5 V

4.4 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

22 mm

70 ns

TC5118160AJ-60

Toshiba

FAST PAGE DRAM

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

MOS

J BEND

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE

1.27 mm

3-STATE

1MX16

1M

TIN LEAD

DUAL

1

R-PDSO-J42

3.7 mm

10.16 mm

Not Qualified

16777216 bit

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

27.31 mm

60 ns

TC514410ASJ-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.15 mm

60 ns

TC514400AJL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

80 ns

THM3220C5BSG-70

Toshiba

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

304 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

17.78 mm

Not Qualified

67108864 bit

.004 Amp

70 ns

THM362020ASG-80

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

TC514100ASJ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

THM321000AS-70

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

32

MICROELECTRONIC ASSEMBLY

16

70 Cel

1MX32

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

70 ns

THM402020SG-10

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

MOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

40

MICROELECTRONIC ASSEMBLY

70 Cel

3-STATE

2MX40

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

83886080 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

100 ns

TC514101AJ-60

Toshiba

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

60 ns

TC514100AP-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

18

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

2.54 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T18

5.5 V

4.4 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

22 mm

100 ns

THM362020ASG-60

Toshiba

FAST PAGE DRAM MODULE

COMMERCIAL

72

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2097152 words

5

36

MICROELECTRONIC ASSEMBLY

18

70 Cel

2MX36

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

75497472 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

60 ns

TC51V18160AFT-70

Toshiba

FAST PAGE DRAM

44

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

MOS

GULL WING

ASYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

3-STATE

1MX16

1M

DUAL

1

R-PDSO-G44

1.2 mm

10.16 mm

Not Qualified

16777216 bit

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.95 mm

70 ns

TC514900AJLL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

524288 words

YES

5

9

SMALL OUTLINE

1.27 mm

70 Cel

512KX9

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.7 mm

10.16 mm

Not Qualified

4718592 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH

e0

18.42 mm

80 ns

TC514400AJ-10

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.75 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

17.15 mm

100 ns

TC514100AZL-80

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

TIN LEAD

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

25.8 mm

80 ns

TC514900AFT-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

28

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

524288 words

5

9

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

512KX9

512K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

10.16 mm

Not Qualified

4718592 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

18.41 mm

70 ns

TC514100AFT-70

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.14 mm

70 ns

TC514100AFTL-60

Toshiba

FAST PAGE DRAM

COMMERCIAL

20

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX1

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.7 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH

e0

17.14 mm

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.