1024 DRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MC-422000A36BH-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

940 mA

2097152 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX36

2M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

75497472 bit

.024 Amp

100 ns

UPD42S4170LV-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

100 mA

262144 words

YES

COMMON

3.3

3.3

16

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD4218160G5M-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

160 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.001 Amp

60 ns

UPD424102GS-10

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

100 ns

UPD424190AV-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

262144 words

NO

COMMON

5

5

18

IN-LINE

ZIP40,.1

DRAMs

1.27 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T40

Not Qualified

4718592 bit

e0

.0003 Amp

70 ns

MC-42S2000LAD32SA-A60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

301 mA

2097152 words

YES

COMMON

3.3

3.3

32

MICROELECTRONIC ASSEMBLY

DIMM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

DUAL

R-PDMA-N72

25.4 mm

Not Qualified

67108864 bit

.0006 Amp

60 ns

UPD42S4805ALE-70

Renesas Electronics

EDO DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

524288 words

YES

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.00015 Amp

70 ns

MC-422000F32BA-70

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

304 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

67108864 bit

.004 Amp

70 ns

UPD4218160LE-50

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

170 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.001 Amp

50 ns

UPD424400GS-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD424412V-60

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

1048576 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD424412GS-80L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD424100V-10L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

4194304 words

NO

SEPARATE

5

5

1

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.0002 Amp

100 ns

MC-421000A36FJ-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1000 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

31.75 mm

Not Qualified

37748736 bit

.012 Amp

80 ns

UPD424101LA-80L

Renesas Electronics

NIBBLE MODE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD424800V-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

95 mA

524288 words

NO

COMMON

5

5

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

UPD42S4170AG5-60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

262144 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD424400LGS-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

1048576 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

DRAMs

.635 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0005 Amp

60 ns

UPD42S18190G5-60-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

180 mA

1048576 words

YES

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX18

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

18874368 bit

e0

.0004 Amp

60 ns

MC-42512AB40F-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

475 mA

524288 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

512KX40

512K

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

20971520 bit

.005 Amp

80 ns

UPD42S4810LV-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

524288 words

YES

COMMON

3.3

3.3

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.0001 Amp

80 ns

UPD424800LG5M-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

524288 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0005 Amp

60 ns

MC-422000A32BA-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

304 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

67108864 bit

.004 Amp

70 ns

MC-421000AB40B-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

800 mA

1048576 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX40

1M

0 Cel

SINGLE

R-PSMA-N72

Not Qualified

41943040 bit

.001 Amp

100 ns

UPD42S4900AV-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

100 mA

524288 words

YES

COMMON

5

5

9

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4718592 bit

e0

.0003 Amp

80 ns

UPD424810AV-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

524288 words

NO

COMMON

5

5

8

IN-LINE

ZIP28,.1

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T28

Not Qualified

4194304 bit

e0

.0003 Amp

80 ns

UPD4218165LE-50

Renesas Electronics

EDO DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

170 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

e0

.001 Amp

50 ns

MC-424000A8BA-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

4194304 words

COMMON

5

5

8

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

4MX8

4M

0 Cel

SINGLE

R-PSMA-N30

20.2946 mm

Not Qualified

33554432 bit

.008 Amp

80 ns

UPD424190G5-80-7JF

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

140 mA

262144 words

NO

COMMON

5

5

18

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX18

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

4718592 bit

e0

.001 Amp

80 ns

UPD424810LG5M-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

524288 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

YES

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

4194304 bit

e0

.0001 Amp

70 ns

MC-421000A36BE-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1320 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

37748736 bit

.012 Amp

60 ns

UPD424800LLE-A70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

524288 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0005 Amp

70 ns

MC-421000A32BT-80

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

720 mA

1048576 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX32

1M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

33554432 bit

.008 Amp

80 ns

UPD424402GSM-70

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

YES

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

70 ns

UPD42S4170LLE-A60

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

40

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

262144 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J40

Not Qualified

4194304 bit

e0

.0001 Amp

60 ns

UPD424900LLE-A80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

524288 words

NO

COMMON

3.3

3.3

9

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

MC-42S1LFD64SA-A70

Renesas Electronics

EDO DRAM MODULE

COMMERCIAL

144

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

560 mA

1048576 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

R-PDMA-N144

25.4 mm

Not Qualified

67108864 bit

.0006 Amp

70 ns

UPD42S4900LLE-80

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

90 mA

524288 words

YES

COMMON

3.3

3.3

9

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX9

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4718592 bit

e0

.0001 Amp

80 ns

UPD42S18160G5M-70

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

44

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

150 mA

1048576 words

YES

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

YES

3-STATE

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

16777216 bit

e0

.00025 Amp

70 ns

MC-422000AA40F-70

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1060 mA

2097152 words

COMMON

5

5

40

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX40

2M

0 Cel

SINGLE

R-PSMA-N72

25.4 mm

Not Qualified

83886080 bit

.02 Amp

70 ns

UPD424102GS-60L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

3-STATE

4MX1

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.0003 Amp

60 ns

UPD424402LB-70L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

100 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

70 ns

MC-421000AA64FB-60

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

700 mA

1048576 words

NO

COMMON

5

5

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

1MX64

1M

0 Cel

DUAL

R-PDMA-N168

25.4 mm

Not Qualified

67108864 bit

.064 Amp

60 ns

UPD424800LE-80L

Renesas Electronics

FAST PAGE DRAM

COMMERCIAL

28

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

95 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

4194304 bit

e0

.0002 Amp

80 ns

UPD424402LA-10L

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

80 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

4194304 bit

e0

.0003 Amp

100 ns

UPD424402V-60

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

120 mA

1048576 words

COMMON

5

5

4

IN-LINE

ZIP20,.1

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T20

Not Qualified

4194304 bit

e0

.001 Amp

60 ns

UPD424402GSM-80

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

TSSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

90 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP20/26,.36

SRAMs

.635 mm

70 Cel

YES

3-STATE

1MX4

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G20

Not Qualified

4194304 bit

e0

.001 Amp

80 ns

MC-424100A9A-10

Renesas Electronics

FAST PAGE DRAM MODULE

COMMERCIAL

30

1024

PLASTIC/EPOXY

NO

CMOS

720 mA

4194304 words

COMMON

5

5

9

SIP30

DRAMs

70 Cel

3-STATE

4MX9

4M

0 Cel

Tin/Lead (Sn/Pb)

SINGLE

26.289 mm

Not Qualified

37748736 bit

e0

.009 Amp

100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.