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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
UPD42S4800G5-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.001 Amp		100 ns
MC-421000A9BA-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	220 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	16.6624 mm		Not Qualified	9437184 bit		.003 Amp		100 ns
MC-421000A36BH-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1320 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M		SINGLE	R-PSMA-N72	31.75 mm		Not Qualified	37748736 bit		.012 Amp		60 ns
UPD42S4100ALA-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words		YES	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0002 Amp		70 ns
HM5283206FP-12	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	100	QFP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	280 mA	262144 words	1,2,4,8,FP		COMMON	3.3	3.3	32	FLATPACK	QFP100,.7X.9	DRAMs	.635 mm	70 Cel		3-STATE	256KX32	256K		QUAD	R-PQFP-G100		83 MHz	Not Qualified	8388608 bit		.003 Amp	1,2,4,8	8 ns
UPD424800LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	100 mA	524288 words		NO	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28			Not Qualified	4194304 bit	e0	.0005 Amp		60 ns
UPD42S4400LGS-A10-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	50 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.0001 Amp		100 ns
UPD424100V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.001 Amp		60 ns
UPD424170LV-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words		NO	COMMON	3.3	3.3	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0005 Amp		80 ns
UPD42S4190LLE-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	262144 words		YES	COMMON	3.3	3.3	18	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4718592 bit	e0	.0001 Amp		80 ns
UPD42S18190LG5-A60-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	1048576 words		YES	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	18874368 bit	e0	.0001 Amp		60 ns
UPD424400LLA-A10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	50 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0005 Amp		100 ns
UPD42S4170V-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	105 mA	262144 words		YES	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0002 Amp		80 ns
UPD424100GS-10-9KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp		100 ns
UPD424400AV-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.001 Amp		80 ns
MC-421000A8BA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	180 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30	16.6624 mm		Not Qualified	8388608 bit		.002 Amp		80 ns
UPD42644LA-80L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.00012 Amp		80 ns
MC-424100A9B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	900 mA	4194304 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	4MX9	4M		SINGLE	R-PSMA-N30	24.0284 mm		Not Qualified	37748736 bit		.009 Amp		70 ns
UPD424100AGSM-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp		60 ns
MC-421000A8BA-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	240 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30	16.6624 mm		Not Qualified	8388608 bit		.002 Amp		60 ns
UPD424100LA-10L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0002 Amp		100 ns
UPD42S4800LE-10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4194304 bit	e0	.0001 Amp		100 ns
MC-422000FA64FB-70	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	670 mA	2097152 words			COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	2MX64	2M		DUAL	R-PDMA-N168			Not Qualified	134217728 bit		.068 Amp		70 ns
UPD424102V-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	4194304 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.001 Amp		80 ns
MC-424000A8BA-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	960 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	4MX8	4M		SINGLE	R-PSMA-N30	20.2946 mm		Not Qualified	33554432 bit		.008 Amp		60 ns
UPD424100LGS-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.0002 Amp		80 ns
UPD42S4900G5-70-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	160 mA	524288 words		YES	COMMON	5	5	9	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX9	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4718592 bit	e0	.00015 Amp		70 ns
UPD424100AGSM-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp		70 ns
MC-421000A36B-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1120 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	37748736 bit		.012 Amp		70 ns
UPD424101LB-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.001 Amp		80 ns
UPD42S4800G5-70-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	105 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.001 Amp		70 ns
UPD424101LA-10L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0003 Amp		100 ns
UPD42S18160LG5M-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.00015 Amp		70 ns
MC-42S1000LAD32SA-A60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	300 mA	1048576 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX32	1M		DUAL	R-PDMA-N72	25.4 mm		Not Qualified	33554432 bit		.0003 Amp		60 ns
UPD424800AV-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	524288 words		NO	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28			Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
MC-421000A9BB-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	220 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	16.6624 mm		Not Qualified	9437184 bit		.003 Amp		100 ns
UPD42S4170AG5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0003 Amp		70 ns
UPD4218160LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	150 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	16777216 bit	e0	.0005 Amp		60 ns
UPD42S4810AV-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	524288 words		YES	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28			Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
UPD424900LE-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	140 mA	524288 words		NO	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4718592 bit	e0	.001 Amp		80 ns
UPD4218160LG5-A50-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.0005 Amp		50 ns
MC-424000A8BA-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	800 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	4MX8	4M		SINGLE	R-PSMA-N30	20.2946 mm		Not Qualified	33554432 bit		.008 Amp		70 ns
UPD4218180G5-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	180 mA	1048576 words		NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	18874368 bit	e0	.0004 Amp		60 ns
MC-424100A8B-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	720 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel		3-STATE	4MX8	4M		SINGLE	R-PSMA-N30	24.0284 mm		Not Qualified	33554432 bit		.008 Amp		100 ns
UPD424800AG5M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.0003 Amp		80 ns
UPD424170AV-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	100 mA	262144 words		NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4194304 bit	e0	.0003 Amp		70 ns
MC-421000A36BE-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	640 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	37748736 bit		.008 Amp		100 ns
MC-424100A9A-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024		PLASTIC/EPOXY	NO	CMOS		900 mA	4194304 words			COMMON	5	5	9		SIP30	DRAMs		70 Cel		3-STATE	4MX9	4M	Tin/Lead (Sn/Pb)	SINGLE		26.289 mm		Not Qualified	37748736 bit	e0	.009 Amp		70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.