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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD4218165G5-50-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	1048576 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.001 Amp	50 ns
UPD42S4800LG5M-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	524288 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.0001 Amp	60 ns
UPD424900ALE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	524288 words	NO	COMMON	5	5	9	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4718592 bit	e0	.0003 Amp	60 ns
UPD42S4190AG5M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	130 mA	262144 words	YES	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4718592 bit	e0	.0003 Amp	60 ns
UPD424190AG5-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	262144 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4718592 bit	e0	.0003 Amp	80 ns
UPD424440LLE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	4194304 bit	e0	.0001 Amp	60 ns
MC-421000A9AB-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024		PLASTIC/EPOXY	NO	CMOS		220 mA	1048576 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		18.2626 mm		Not Qualified	9437184 bit	e0	.003 Amp	100 ns
UPD42S4800LG5-A80-7KD	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	524288 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.0001 Amp	80 ns
UPD42S4400LLA-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0001 Amp	70 ns
UPD424190LV-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	110 mA	262144 words	NO	COMMON	3.3	3.3	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4718592 bit	e0	.0001 Amp	70 ns
UPD42S4400LGS-A10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	50 mA	1048576 words	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.0001 Amp	100 ns
UPD424410GSM-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp	80 ns
UPD424402GS-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp	80 ns
UPD4218165LG5-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	150 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.0005 Amp	60 ns
UPD42S18170LG5-A70-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.0001 Amp	70 ns
UPD424102LA-10L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0003 Amp	100 ns
UPD4218180LG5-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	170 mA	1048576 words	NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	18874368 bit	e0	.0004 Amp	60 ns
UPD424400ALA-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.001 Amp	60 ns
UPD42S4170G5-80-7KF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	105 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0002 Amp	80 ns
UPD424100AGSM-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.001 Amp	80 ns
UPD42S4900LV-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	110 mA	524288 words	YES	COMMON	3.3	3.3	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	512KX9	512K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28			Not Qualified	4718592 bit	e0	.0001 Amp	60 ns
UPD424170AG5-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4194304 bit	e0	.0003 Amp	60 ns
MC-422000A36FH-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1180 mA	2097152 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	2MX36	2M		SINGLE	R-PSMA-N72	31.75 mm		Not Qualified	75497472 bit		.024 Amp	70 ns
UPD42S4170ALE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.0003 Amp	70 ns
UPD424800LE-70L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	105 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4194304 bit	e0	.0002 Amp	70 ns
UPD424400LA-10L	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0002 Amp	100 ns
UPD42S4800LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	524288 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4194304 bit	e0	.0001 Amp	60 ns
MC-42512AB40F-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	400 mA	524288 words		COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	512KX40	512K		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	20971520 bit		.005 Amp	100 ns
UPD424800LLE-A10	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	60 mA	524288 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4194304 bit	e0	.0005 Amp	100 ns
UPD424400LLA-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words	NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0005 Amp	60 ns
UPD424102V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.001 Amp	70 ns
UPD488170LVN-A50-9	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY	YES	CMOS		480 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	Tin/Lead (Sn/Pb)	SINGLE			250 MHz	Not Qualified	18874368 bit	e0	.135 Amp
UPD424101GSM-70L	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words		SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	YES	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.0003 Amp	70 ns
MC-421000A36BJ-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1320 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M		SINGLE	R-PSMA-N72	31.75 mm		Not Qualified	37748736 bit		.012 Amp	60 ns
UPD42S4100ALA-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	4194304 words	YES	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20			Not Qualified	4194304 bit	e0	.0002 Amp	60 ns
MC-421000A36BD-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1320 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M		SINGLE	R-PSMA-N72	25.4 mm		Not Qualified	37748736 bit		.012 Amp	60 ns
UPD424190LG5-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	262144 words	NO	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40			Not Qualified	4718592 bit	e0	.0001 Amp	70 ns
UPD488170LVN-A45	Renesas Electronics	RAMBUS DRAM	COMMERCIAL	32		1024		PLASTIC/EPOXY	YES	CMOS		440 mA	2097152 words		COMMON	3.3	3.3	9		SMSIP32,25	DRAMs	2.54 mm	70 Cel		3-STATE	2MX9	2M	Tin/Lead (Sn/Pb)	SINGLE			225 MHz	Not Qualified	18874368 bit	e0	.33 Amp
UPD42S4190AV-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	130 mA	262144 words	YES	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel		3-STATE	256KX18	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T40			Not Qualified	4718592 bit	e0	.0003 Amp	60 ns
UPD42S4170ALE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	40	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	262144 words	YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40			Not Qualified	4194304 bit	e0	.0003 Amp	60 ns
UPD424805ALE-70	Renesas Electronics	EDO DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	60 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	4194304 bit	e0	.001 Amp	70 ns
UPD424810LG5M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	524288 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	YES	3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28			Not Qualified	4194304 bit	e0	.0001 Amp	80 ns
MC-424000A9AA-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024		PLASTIC/EPOXY	NO	CMOS		1080 mA	4194304 words		COMMON	5	5	9		SIP30	DRAMs		70 Cel		3-STATE	4MX9	4M	Tin/Lead (Sn/Pb)	SINGLE		26.289 mm		Not Qualified	37748736 bit	e0	.009 Amp	60 ns
UPD42S4100AGS-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	YES	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20			Not Qualified	4194304 bit	e0	.0002 Amp	80 ns
UPD4218180G5-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	190 mA	1048576 words	NO	COMMON	5	5	18	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	18874368 bit	e0	.0004 Amp	50 ns
UPD424102V-80L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.0003 Amp	80 ns
UPD4218180LE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	180 mA	1048576 words	NO	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	18874368 bit	e0	.0004 Amp	60 ns
UPD424102V-60L	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20			Not Qualified	4194304 bit	e0	.0003 Amp	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.