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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT4C1670TG-8TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT4C1664TG-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	70 ns
MT4C1664DJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	80 ns
MT4C1670DJ-7L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	26.06 mm	70 ns
MT8C8256M-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD		80 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30		16.51 mm		Not Qualified	2097152 bit						150 ns
MT4C1664Z-10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	50.71 mm	100 ns
MT4264C-15M070	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		40 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			150 ns
MT4C1665TG-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT4C1665DJ-7LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	70 ns
MT4C1670Z-10	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	50.71 mm	100 ns
MT4C1665DJ-10LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT4C1665DJ-7L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	26.06 mm	70 ns
MT4C1670TG-10	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	18.41 mm	100 ns
MT4C1671Z-10L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	90 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	50.71 mm	100 ns
MT4264C-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			100 ns
MT4C1671DJ-8	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.06 mm	80 ns
5962-01-258-7473	Micron Technology	PAGE MODE DRAM	OTHER	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		55 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	110 Cel	3-STATE	64KX4	64K	-55 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit						120 ns
MT4C1664Z-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	110 mA	65536 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	50.71 mm	80 ns
MT4C1670Z-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	50.71 mm	70 ns
MT4C1671TG-8L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		GULL WING	ASYNCHRONOUS	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	18.41 mm	80 ns
MT4264C-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	65536 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0			200 ns
MT4C1670DJ-7LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	70 ns
MT4C1664DJ-8L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	26.06 mm	80 ns
MT4259MN-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				220 mA	262144 words		SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			100 ns
MT4C1671TG-7TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	70 ns
MT1258-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
5962-01-271-5534	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	262144 bit						120 ns
MT1259Z-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			100 ns
MT4C1664DJ-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.06 mm	70 ns
MT1259C-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			100 ns
MT4C1664Z-8L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	110 mA	65536 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	50.71 mm	80 ns
MT4C1671DJ-10TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	100 ns
MT8257M-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		NO LEAD			262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE		R-PSMA-N30		16.51 mm		Not Qualified	2097152 bit						150 ns
MT4C1664TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT1259EJ-10	Micron Technology	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		55 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			100 ns
MT4C1670TG-7L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		GULL WING	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	18.41 mm	70 ns
MT4C1665Z-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	110 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	50.71 mm	80 ns
MT4C1671DJ-8L	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0003 Amp	26.06 mm	80 ns
MT4C1664TG-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	80 ns
MT1259EC-20/883C	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N18				Not Qualified	262144 bit			e0			200 ns
MT4C1664TG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		18.41 mm	70 ns
MT1259Z-20	Micron Technology	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			200 ns
MT8C8256MN-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				80 mA	262144 words		COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE				12.954 mm		Not Qualified	2097152 bit			e0			150 ns
MT1259EJ-8XT	Micron Technology	PAGE MODE DRAM	OTHER	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS		J BEND		65 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			80 ns
MT4C1665DJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.81 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0		26.06 mm	80 ns
MT1259Z-8XT	Micron Technology	PAGE MODE DRAM	OTHER	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		65 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			80 ns
MT4259MN-8	Micron Technology	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				260 mA	262144 words		SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			80 ns
MT4C1671Z-10	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	100 mA	65536 words		COMMON	5	5	16	IN-LINE	ZIP40,.1	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.7 mm	2.885 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	50.71 mm	100 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.