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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD41464V-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	262144 bit	e0		150 ns
MC-41256A4C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		CERAMIC	NO	MOS			262144 words		SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1048576 bit	e0		150 ns
MC-41256A8A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS			262144 words		COMMON	5	5	8		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	Tin/Lead (Sn/Pb)	SINGLE		18.0086 mm	Not Qualified	2097152 bit	e0		150 ns
UPD421165LE-35	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-41256A9B-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	720 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit			100 ns
MC-41256A5A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY	NO	MOS			262144 words		SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1310720 bit	e0		150 ns
UPD41464C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	262144 bit	e0		150 ns
UPD421175LE-30	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-41256A9A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY	NO	MOS			262144 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	Tin/Lead (Sn/Pb)	SINGLE		18.0086 mm	Not Qualified	2359296 bit	e0		150 ns
UPD41257L-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		120 ns
UPD41464L-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	85 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		80 ns
UPD421165G5-35	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-42256AB8BA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	140 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2097152 bit		.002 Amp	80 ns
UPD41256L-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		120 ns
UPD41256L-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		200 ns
UPD421165G5-30	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-42256AB9FA-70	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	240 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	70 ns
UPD41256C-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		200 ns
UPD41256C-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	90 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		85 ns
UPD41256L-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	80 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		100 ns
UPD41256C-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	90 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		80 ns
UPD41464L-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		150 ns
MC-157-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	120 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30		Not Qualified	2097152 bit		.002 Amp	100 ns
UPD41256C-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	80 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16		Not Qualified	262144 bit	e0		100 ns
MC-41256A8B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD	720 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2097152 bit			80 ns
UPD41257V-15	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16		Not Qualified	262144 bit	e0		150 ns
UPD41464L-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND	75 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		120 ns
MC-42256AB9BA-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	180 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	100 ns
UPD41257L-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		200 ns
UPD421175LE-35	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-41256A4A-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS			262144 words		SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1048576 bit	e0		100 ns
UPD421165LE-30	Renesas Electronics	EDO DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD41256D-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	262144 bit	e0		120 ns
UPD41464V-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		65536 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	262144 bit	e0		120 ns
UPD41256D-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	262144 bit	e0		200 ns
MC-42256AB8FA-10	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	120 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2097152 bit		.002 Amp	100 ns
UPD41257D-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16		Not Qualified	262144 bit	e0		200 ns
5962-01-322-3301	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE	80 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K		DUAL	R-PDIP-T16		Not Qualified	262144 bit			100 ns
UPD41256L-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	YES	MOS	J BEND		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J18		Not Qualified	262144 bit	e0		150 ns
UPD41256V-20	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16		Not Qualified	262144 bit	e0		200 ns
UPD421175G5-35-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421175G5-25-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	125 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	1048576 bit	e0	.001 Amp	60 ns
5962-01-266-2044	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K		DUAL	R-PDIP-T16		Not Qualified	262144 bit			120 ns
MC-41256A8B-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	NO LEAD		262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2097152 bit			150 ns
UPD421165G5-25-A	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40		Not Qualified	1048576 bit	e0	.001 Amp	70 ns
MC-42256AB9FA-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	210 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE	R-PSMA-N30	16.7894 mm	Not Qualified	2359296 bit		.003 Amp	80 ns
MC-41256A4A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY	NO	MOS			262144 words		SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	1048576 bit	e0		120 ns
UPD41257V-12	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NO	MOS	THROUGH-HOLE		262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T16		Not Qualified	262144 bit	e0		120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.