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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TMM41256C-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
TMM41256T-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
TMM41464AZ-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	65536 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	262144 bit			e0			150 ns
TMM41256P-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM41257AT-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		65 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
TMM41257T-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			120 ns
TC511665J-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.04 mm	80 ns
TMM41257AP-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
TC511664ZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TMM41257T-15	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
TC511664BJL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.04 mm	80 ns
TC511664Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TC511665Z-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TMM41464AP-10	Toshiba	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		80 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			100 ns
TC511664BJ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	SOJ	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	DUAL	1	R-PDSO-J40	5.5 V	3.7 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		26.04 mm	80 ns
TMM41257AZ-12	Toshiba	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			120 ns
TC511665BZL-10	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	100 ns
TC511665BZL-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	80 ns
TC511664BZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	80 ns
TMM41256AZ-12	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		72 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			120 ns
TMM41256AZ-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		65 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			150 ns
TC511665BZ-80	Toshiba	FAST PAGE DRAM	COMMERCIAL	40	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			5		16	IN-LINE			1.27 mm	70 Cel		64KX16	64K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40	5.5 V	12.07 mm		Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0		51.2 mm	80 ns
UPD41464C-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		85 mA	65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	262144 bit			e0			80 ns
MC-41256A9B-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD		810 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit						80 ns
UPD421165G5-25	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	1048576 bit			e0	.001 Amp		70 ns
MC-411000A1A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				1048576 words		SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			120 ns
MC-41256A8B-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit						120 ns
UPD41256D-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	262144 bit			e0			150 ns
UPD41257C-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			100 ns
MC-42256AB8FA-80	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		140 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit				.002 Amp		80 ns
MC-42256AB8FA-60	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		180 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit				.002 Amp		60 ns
MC-42256AB9BA-80	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		210 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit				.003 Amp		80 ns
MC-41256A5C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	24		256		CERAMIC		NO		MOS				262144 words		SEPARATE	5	5	5		SIP24,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1310720 bit			e0			120 ns
MC-42256AB8FA-70	Renesas Electronics	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		160 mA	262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2097152 bit				.002 Amp		70 ns
UPD41257C-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			200 ns
UPD421175G5-30-7JF	Renesas Electronics	EDO DRAM	COMMERCIAL	40	TSOP	256	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		115 mA	65536 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G40				Not Qualified	1048576 bit			e0	.001 Amp		70 ns
UPD41464L-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		80 mA	65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			100 ns
MC-42256AB9FA-60	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		270 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit				.003 Amp		60 ns
MC-411000A1A-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				1048576 words		SEPARATE			1		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	SINGLE						Not Qualified	1048576 bit			e0			150 ns
UPD41257L-10	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			100 ns
UPD41257L-15	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND			262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			150 ns
UPD41464V-10	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	20	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20				Not Qualified	262144 bit			e0			100 ns
MC-41256A9A-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				262144 words		COMMON	5	5	9		SIP30,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	Tin/Lead (Sn/Pb)	SINGLE				18.0086 mm		Not Qualified	2359296 bit			e0			120 ns
UPD41257V-20	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T16				Not Qualified	262144 bit			e0			200 ns
UPD41256C-15	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			150 ns
UPD41256L-85	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY		YES		MOS	J BEND		90 mA	262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	QUAD		R-PQCC-J18				Not Qualified	262144 bit			e0			85 ns
UPD41256C-12	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	262144 bit			e0			120 ns
MC-42256AB9BA-70	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		240 mA	262144 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K		SINGLE		R-PSMA-N30		16.7894 mm		Not Qualified	2359296 bit				.003 Amp		70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.